IRF6715MPbF IRF6715MTRPbF DirectFET Power MOSFET RoHs Compliant and Halogen Free V V R R DSS GS DS(on) DS(on) Low Profile (<0.6 mm) 25V max 20V max 1.3m 10V 2.1m 4.5V Dual Sided Cooling Compatible Q Q Q Q Q V Ultra Low Package Inductance g tot gd gs2 rr oss gs(th) Optimized for High Frequency Switching 40nC 12.0nC 5.3nC 37nC 26nC 1.9V Ideal for CPU Core DC-DC Converters Optimized for Sync. FET socket of Sync. Buck Converter Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques 100% Rg tested DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) MX SQ SX ST MQ MT MP Description TM The IRF6715MPbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6715MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6715MPbF has been optimized for parameters that are critical in synchronous buck including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6715MPbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications. Absolute Maximum Ratings Parameter Max. Units V 25 DS Drain-to-Source Voltage V V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V 34 I T = 25C A GS D Continuous Drain Current, V 10V 27 I T = 70C GS D A A I T = 25C Continuous Drain Current, V 10V 180 GS D C 270 I Pulsed Drain Current DM E Single Pulse Avalanche Energy 200 mJ AS I Avalanche Current 27 A AR 4 14.0 I = 27A I = 34A D D 12.0 V = 20V DS 3 V = 13V 10.0 DS 8.0 2 T = 125C 6.0 J 4.0 1 T = 25C 2.0 J 0 0.0 2 4 6 8 10 12 14 16 18 20 0 20406080 100 120 Q Total Gate Charge (nC) G V Gate -to -Source Voltage (V) GS, Fig 1. Typical On-Resistance Vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage T measured with thermocouple mounted to top (Drain) of part. Click on this section to link to the appropriate technical paper. C Repetitive rating pulse width limited by max. junction temperature. Click on this section to link to the DirectFET Website. Starting T = 25C, L = 0.56mH, R = 25 , I = 27A. Surface mounted on 1 in. square Cu board, steady state. J G AS www.irf.com 1 02/16/11 Typical R (m ) DS(on) V , Gate-to-Sourc e Voltage (V) GS Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV V = 0V, I = 250A Drain-to-Source Breakdown Voltage 25 V DSS GS D Reference to 25C, I = 1mA V / T Breakdown Voltage Temp. Coefficient 17 mV/C D DSS J R V = 10V, I = 34A Static Drain-to-Source On-Resistance 1.3 1.6 m DS(on) GS D V = 4.5V, I = 27A 2.1 2.7 GS D V Gate Threshold Voltage 1.4 1.9 2.4 V GS(th) V = V , I = 100A DS GS D V / T Gate Threshold Voltage Coefficient -6.2 mV/C GS(th) J I V = 20V, V = 0V Drain-to-Source Leakage Current 1.0 A DSS DS GS V = 20V, V = 0V, T = 125C 150 DS GS J V = 20V I Gate-to-Source Forward Leakage 100 nA GS GSS V = -20V Gate-to-Source Reverse Leakage -100 GS V = 13V, I = 27A gfs Forward Transconductance 135 S DS D Q Total Gate Charge 40 59 g V = 13V Q Pre-Vth Gate-to-Source Charge 12 DS gs1 V = 4.5V Q Post-Vth Gate-to-Source Charge 5.3 nC gs2 GS I = 27A Q Gate-to-Drain Charge 12 D gd Q Gate Charge Overdrive 11 See Fig. 15 godr Q Switch Charge (Q + Q ) 17 sw gs2 gd V = 16V, V = 0V Q Output Charge 26 nC DS GS oss R Gate Resistance 1.1 2.0 G V = 13V, V = 4.5V t Turn-On Delay Time 20 DD GS d(on) t I = 27A Rise Time 31 ns r D t Turn-Off Delay Time 16 R = 1.8 d(off) G t Fall Time 12 See Fig. 17 f C V = 0V Input Capacitance 5340 iss GS V = 13V C Output Capacitance 1280 pF oss DS C = 1.0MHz Reverse Transfer Capacitance 600 rss Diode Characteristics Conditions Parameter Min. Typ. Max. Units I Continuous Source Current MOSFET symbol S 98 showing the (Body Diode) A I Pulsed Source Current integral reverse SM 270 p-n junction diode. (Body Diode) T = 25C, I = 27A, V = 0V V Diode Forward Voltage 1.0 V J S GS SD t T = 25C, I = 27A Reverse Recovery Time 28 42 ns rr J F Q Reverse Recovery Charge 37 56 nC di/dt = 200A/s rr Pulse width 400s duty cycle 2% 2 www.irf.com