IRF6718L2TRPbF IRF6718L2TR1PbF DirectFET Power MOSFET RoHS Compliant Containing No Lead and Bromide Dual Sided Cooling Compatible V V R R DSS GS DS(on) DS(on) Ultra Low Package Inductance 25V max 20V max 0.50m 10V 1.0m 4.5V Very Low R for Reduced Conduction Losses DS(ON) Q Q Q Q Q V g tot gd gs2 rr oss gs(th) Optimized for Active O-Ring / Efuse Applications 64nC 20nC 9.4nC 67nC 50nC 1.9V Compatible with existing Surface Mount Techniques DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline S1 S2 SB M2 M4 L4 L6 L8 Description The IRF6718L2TRPbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has the footprint of a D-pak. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems. The IRF6718L2TRPbF has extremely low Si Rdson coupled with ultra low package resistance to minimize conduction losses. The IRF6718L2TRPbF has been optimized for parameters that are critical in reliable operation on Active O-Ring / Efuse / hot swap applications. Absolute Maximum Ratings Max. Parameter Units V Drain-to-Source Voltage 25 V DS 20 V Gate-to-Source Voltage GS Continuous Drain Current, V 10V 61 I T = 25C GS D A I T = 70C Continuous Drain Current, V 10V 52 A GS D A I T = 25C Continuous Drain Current, V 10V 270 C GS D 490 I Pulsed Drain Current DM E Single Pulse Avalanche Energy 530 mJ AS I 49 Avalanche Current A AR 4 14.0 I = 61A I = 49A D D 12.0 V = 20V 3 DS 10.0 V = 13V DS 8.0 2 6.0 T = 125C J 4.0 1 2.0 T = 25C J 0 0.0 2 4 6 8 10 0 20 40 60 80 100 120 140 160 180 Q Total Gate Charge (nC) G V Gate -to -Source Voltage (V) GS, Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage Click on this section to link to the appropriate technical paper. T measured with thermocouple mounted to top (Drain) of part. C Repetitive rating pulse width limited by max. junction temperature. Click on this section to link to the DirectFET Website. Starting T = 25C, L = 0.44mH, R = 25, I = 49A. Surface mounted on 1 in. square Cu board, steady state. J G AS www.irf.com 1 07/27/11 pic Ty al R (m ) D ) S(on V , Gate-to-Source Voltage (V) GS Static T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units BV V = 0V, I = 250 A Drain-to-Source Breakdown Voltage 25 V DSS GS D V / T Reference to 25C, I = 1mA Breakdown Voltage Temp. Coefficient 11 mV/C DSS J D V = 10V, I = 61A R Static Drain-to-Source On-Resistance 0.50 0.70 m GS D DS(on) V = 4.5V, I = 49A 1.0 1.4 GS D V = V , I = 150 A V Gate Threshold Voltage 1.35 1.90 2.35 V DS GS D GS(th) V /T Gate Threshold Voltage Coefficient -7.6 mV/C GS(th) J I V = 20V, V = 0V Drain-to-Source Leakage Current 1.0 A DSS DS GS V = 20V, V = 0V, T = 125C 150 DS GS J I V = 20V Gate-to-Source Forward Leakage 100 nA GSS GS V = -20V Gate-to-Source Reverse Leakage -100 GS V = 13V, I = 49A gfs Forward Transconductance 820 S DS D Q Total Gate Charge 64 96 g Q V = 13V Pre-Vth Gate-to-Source Charge 18 gs1 DS Q V = 4.5V Post-Vth Gate-to-Source Charge 9.4 nC gs2 GS I = 49A Q Gate-to-Drain Charge 20 gd D Q Gate Charge Overdrive 16.6 See Fig. 18 godr Q Switch Charge (Q + Q ) 29.4 sw gs2 gd Q V = 16V, V = 0V Output Charge 50 nC oss DS GS R Gate Resistance 0.90 G t V = 13V, V = 4.5V Turn-On Delay Time 67 d(on) DD GS t I = 49A Rise Time 140 ns r D t Turn-Off Delay Time 47 R = 6.8 d(off) G t Fall Time 53 f V = 0V C Input Capacitance 8910 GS iss C V = 13V Output Capacitance 2310 pF oss DS C = 1.0MHz Reverse Transfer Capacitance 1115 rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions I MOSFET symbol Continuous Source Current 61 S (Body Diode) A showing the I Pulsed Source Current 490 integral reverse SM (Body Diode) p-n junction diode. V T = 25C, I = 49A, V = 0V Diode Forward Voltage 1.0 V SD J S GS t T = 25C, I = 49A Reverse Recovery Time 39 59 ns rr J F Q Reverse Recovery Charge 67 100 nC di/dt = 200A/s rr Repetitive rating pulse width limited by max. junction temperature. Pulse width 400s duty cycle 2%. 2 www.irf.com