PD - 95266A IRF7331PbF HEXFET Power MOSFET Ultra Low On-Resistance V R max (m I DSS DS(on) D Dual N-Channel MOSFET 20V 30 V = 4.5V 7.0A GS Surface Mount 45 V = 2.5V 5.6A GS Available in Tape & Reel Lead-Free Description 1 8 S1 D1 These N-Channel HEXFET power MOSFETs from 2 7 G1 D1 International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance 3 6 S2 D2 per silicon area. This benefit provides the designer 4 5 with an extremely efficient device for use in battery G2 D2 and load management applications. Top View SO-8 The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering technique Parameter Max. Units V Drain- Source Voltage 20 V DS I T = 25C Continuous Drain Current, V 4.5V 7.0 D A GS I T = 70C Continuous Drain Current, V 4.5V 5.5 A D A GS I Pulsed Drain Current 28 DM P T = 25C Power Dissipation 2.0 D A P T = 70C Power Dissipation 1.3 D A Linear Derating Factor 16 mW/C V Gate-to-Source Voltage 12 V GS T T Junction and Storage Temperature Range -55 to + 150 C J, STG Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Drain Lead 42 JL R Junction-to-Ambient 62.5 C/W JA www.irf.com 1 07/09/08 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 20 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.013 V/C Reference to 25C, I = 1mA (BR)DSS J D 30 V = 4.5V, I = 7.0A GS D R Static Drain-to-Source On-Resistance DS(on) m 45 V = 2.5V, I = 5.6A GS D V Gate Threshold Voltage 0.6 1.2 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 14 S V = 10V, I = 7.0A fs DS D 1.0 V = 16V, V = 0V DS GS I Drain-to-Source Leakage Current DSS 25 V = 16V, V = 0V, T = 70C DS GS J Gate-to-Source Forward Leakage 100 V = 12V GS Gate-to-Source Reverse Leakage -100 V = -12V GS Q Total Gate Charge 13 20 I = 7.0A g D Q Gate-to-Source Charge 3.7 nC V = 10V gs DS Q Gate-to-Drain Mille) Charge 2.1 V = 4.5V gd GS t Turn-On Delay Time 7.6 V = 10V d(on) DD t Rise Time 22 I = 1.0A r D t Turn-Off Delay Time 110 R = 53 d(off) G t Fall Time 50 V = 4.5V f GS C Input Capacitance 1340 V = 0V iss GS C Output Capacitance 170 pF V = 16V oss DS C Reverse Transfer Capacitance 120 = 1.0MHz rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 2.0 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 28 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.2 V T = 25C, I = 2.0A, V = 0V SD J S GS t Reverse Recovery Time 31 47 ns T = 25C, I = 2.0A rr J F Q Reverse Recovery Charge 15 23 nC di/dt = 100A/s rr Repetitive rating pulse width limited by Surface mounted on 1 in square Cu board max. junction temperature. Pulse width 400s duty cycle 2 www.irf.com