IRF7342PBF Infineon

Name: IRF7342PBF
Brand: Infineon
SKU: IRF7342PBF_Infineon
Availability: OutOfStock
Rating: 5 (11 reviews)

IRF7342PBF electronic component of Infineon

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IRF7342PBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF7342PBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.	IRF7342PBF
Manufacturer:	Infineon
Category:	MOSFETs
Description:	Transistor: P-MOSFET x2; unipolar; -55V; -3.4A; 2W; SO8
Datasheet:	IRF7342PBF Datasheet (PDF)

Price (USD)

N/A

Obsolete

IRF7342PBF More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability 0

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 4.2184
10	$ 1.8104
100	$ 1.2339
500	$ 0.9187
1000	$ 0.7253

N/A

Obsolete

Availability 0

MOQ : 25
Multiples : 25

Qty	Unit Price
25	$ 0.5722
300	$ 0.5357
1250	$ 0.4931

N/A

Obsolete

Availability 0

MOQ : 25
Multiples : 25

Qty	Unit Price
25	$ 0.5722
300	$ 0.5357
1250	$ 0.4931

N/A

Obsolete

Availability 0

MOQ : 1
Multiples : 3800

Qty	Unit Price
1	$ 35.2646

N/A

Obsolete

Availability 0

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 1.3137
10	$ 1.1184
100	$ 0.8593
500	$ 0.7593
1000	$ 0.6002

N/A

Obsolete

Availability 0

MOQ : 77
Multiples : 1

Qty	Unit Price
77	$ 0.5568
250	$ 0.4757
500	$ 0.4516

N/A

Obsolete

Availability 0

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 0.9519
5	$ 0.6604
6	$ 0.4186
71	$ 0.3934

N/A

Obsolete

Specifications

Manufacturer Infineon Infineon
Product Category MOSFETs MOSFETs
RoHS - XON Y Y
Transistor Polarity P - Channel P - Channel
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Mounting Style Smd/Smt Smd/Smt
Package / Case SOIC - 8 SOIC - 8
Packaging Tube Tube
Configuration Dual Dual
Brand Infineon Infineon
Continuous Drain Current - 3.4 A - 3.4 A
Drain-Source Breakdown Voltage - 55 V - 55 V
Gate-Source Breakdown Voltage 20 V 20 V
Power Dissipation 2 W 2 W
Rds On 105 Mohms 105 Mohms
Fall Time 22 ns 22 ns
Gate Charge Qg 26 nC 26 nC
Rise Time 10 ns 10 ns
Factory Pack Quantity : 95 95
Typical Turn-Off Delay Time 43 ns 43 ns

We are delighted to provide the IRF7342PBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF7342PBF and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The Infineon IRF7342PBF is an advanced N-Channel MOSFET with a maximum drain source voltage of 600V, a drain current of 75A and a Gate Threshold Voltage range between 2.3V to 4.3V. It is designed for use in a range of high-power switching applications, and is optimized for use in applications such as Industrial Motor Control, Home Appliances, Photovoltaic System Inverters, Uninterruptible Power Supplies, and High-Voltage DC-DC converters. The features include a low and consistent gate charge, high reliable avalanche ruggedness, and an optimized gate to drain resistance. It is built using Infineon’s advanced CoolMOS process technology, and is housed in a TO-220AB package.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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INTL RECTIFIER
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