IRF7351PbF HEXFET Power MOSFET Applications V R max Qg (typ.) DSS DS(on) Synchronous Rectifier MOSFET for 17.8m V = 10V 60V 24nC GS Isolated DC-DC Converters Low Power Motor Drive Systems 1 8 S1 D1 Benefits 2 7 G1 D1 Ultra-Low Gate Impedance 3 6 S2 D2 Fully Characterized Avalanche Voltage 4 5 G2 D2 and Current 20V V Max. Gate Rating SO-8 GS Top View Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 60 V DS V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V I T = 25C 8.0 A GS D Continuous Drain Current, V 10V I T = 70C 6.4 A GS D A Pulsed Drain Current I 64 DM Power Dissipation P T = 25C 2.0 W A D Power Dissipation P T = 70C 1.28 D A Linear Derating Factor 0.016 W/C T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units Junction-to-Drain Lead R 20 C/W JL Junction-to-Ambient R 62.5 JA Notes through are on page 10 www.irf.com 1 11/18/09 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250A DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.068 V/C Reference to 25C, I = 1mA DSS J D R Static Drain-to-Source On-Resistance 13.7 17.8 V = 10V, I = 8.0A DS(on) m GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 50A GS(th) DS GS D V Gate Threshold Voltage Coefficient -8.2 mV/C GS(th) I DSS Drain-to-Source Leakage Current 20 A V = 60V, V = 0V DS GS 250 V = 60V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 100 nA V = 20V GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 18 S V = 25V, I = 6.4A DS D Q Total Gate Charge 24 36 g Q Pre-Vth Gate-to-Source Charge 3.8 V = 30V gs1 DS Q Post-Vth Gate-to-Source Charge 1.2 nC V = 10V gs2 GS Q gd Gate-to-Drain Charge 7.2 I = 6.4A D Q godr Gate Charge Overdrive 11.8 See Fig. 17 Q Switch Charge (Q + Q ) sw gs2 gd 8.4 Q Output Charge 7.5 nC V = 16V, V = 0V oss DS GS t Turn-On Delay Time 5.1 V = 30V, V = 10V d(on) DD GS t Rise Time 5.9 ns I = 6.4A r D t Turn-Off Delay Time 17 R = 1.8 d(off) G t f Fall Time 6.7 C iss Input Capacitance 1330 V = 0V GS C oss Output Capacitance 190 pF V = 30V DS C rss Reverse Transfer Capacitance 92 = 1.0MHz Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 325 mJ AS Avalanche Current I 6.4 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current 1.8 MOSFET symbol S (Body Diode) A showing the I SM Pulsed Source Current 64 integral reverse (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.3 V T = 25C, I = 6.4A, V = 0V J S GS t Reverse Recovery Time 20 30 ns T = 25C, I = 6.4A, V = 30V rr J F DD Q di/dt = 300A/s Reverse Recovery Charge 61 92 nC rr 2 www.irf.com