IRF7410GPbF HEXFET Power MOSFET Ultra Low On-Resistance V R max I DSS DS(on) D P-Channel MOSFET -12V 7m V = -4.5V -16A GS Surface Mount 9m V = -2.5V -13.6A GS Available in Tape & Reel 13m V = -1.8V -11.5A GS Lead-Free Halogen-Free Description A These P-Channel HEXFET Power MOSFETs from 1 8 S D International Rectifier utilize advanced processing 2 7 techniques to achieve the extremely low on-resistance S D per silicon area. This benefit provides the designer 3 6 S D with an extremely efficient device for use in battery and load management applications.. 4 5 G D The SO-8 has been modified through a customized SO-8 Top View leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering technique Parameter Max. Units V Drain- Source Voltage -12 V DS I T = 25C Continuous Drain Current, V -4.5V -16 D A GS I T = 70C Continuous Drain Current, V -4.5V -13 A D A GS I Pulsed Drain Current -65 DM P T = 25C Power Dissipation 2.5 D A P T = 70C Power Dissipation 1.6 D A Linear Derating Factor 20 mW/C V Gate-to-Source Voltage 8 V GS T T Junction and Storage Temperature Range -55 to +150 C J, STG Thermal Resistance Parameter Max. Units R Maximum Junction-to-Ambient 50 C/W JA www.irf.com 1 07/10/09 Electrical Characteristics TJ = 25C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -12 V V = 0V, I = -250A (BR)DSS GS D V /T (BR)DSS J Breakdown Voltage Temp. Coefficient 0.006 V/C Reference to 25C, I = -1mA D 7 V = -4.5V, I = -16A GS D R Static Drain-to-Source On-Resistance 9 V = -2.5V, I = -13.6A DS(on) m GS D 13 V = -1.8V, I = -11.5A GS D V GS(th) Gate Threshold Voltage -0.4 -0.9 V V = V , I = -250A DS GS D V /T Gate Threshold Voltage Coefficient -3.09 mV/C GS(th) J gfs Forward Transconductance 55 S V = -10V, I = -16A DS D I DSS Drain-to-Source Leakage Current -1.0 V = -9.6V, V = 0V DS GS A -25 V = -9.6V, V = 0V, T = 70C DS GS J I Gate-to-Source Forward Leakage -100 V = -8V GSS GS nA Gate-to-Source Reverse Leakage 100 V = 8V GS Q g Total Gate Charge 91 I = -16A D Q Gate-to-Source Charge 18 V =-9.6V gs nC DS Q Gate-to-Drain Mille) Charge 25 V = -4.5V gd GS t d(on) Turn-On Delay Time 13 20 V = -6V V = -4.5V DD GS t r Rise Time 12 18 I =-1.0A D ns t Turn-Off Delay Time 271 407 R = 6 d(off) D t f Fall Time 200 300 R = 6 G C iss Input Capacitance 8676 V = 0V GS C Output Capacitance 2344 V = -10V oss pF DS C Reverse Transfer Capacitance 1604 = 1.0 MHz rss Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol D -2.5 (Body Diode) showing the A I G Pulsed Source Current integral reverse SM -65 S (Body Diode) p-n junction diode. V Diode Forward Voltage -1.2 V T = 25C, I = -2.5A, V = 0V SD J S GS T = 25C I = -2.5A t Reverse Recovery Time 97 145 rr ns J F C di/dt = -100A/s Q rr Reverse Recovery Charge 134 201 Repetitive rating pulse width limited by Surface mounted on 1 in square Cu board, t 10sec. max. junction temperature. Pulse width 400s duty cycle 2 www.irf.com