IRF7420PbF HEXFET Power MOSFET Ultra Low On-Resistance V R max I DSS DS(on) D P-Channel MOSFET -12V 14m V = -4.5V -11.5A GS Surface Mount 17.5m V = -2.5V -9.8A GS Available in Tape & Reel 26m V = -1.8V -8.1A GS Lead-Free Description A These P-Channel HEXFET Power MOSFETs from 1 8 S D International Rectifier utilize advanced processing 2 7 techniques to achieve the extremely low on-resistance S D per silicon area. This benefit provides the designer 3 6 S D with an extremely efficient device for use in battery and load management applications.. 4 5 G D The SO-8 has been modified through a customized SO-8 Top View leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering technique Parameter Max. Units V Drain- Source Voltage -12 V DS I T = 25C Continuous Drain Current, V -4.5V -11.5 D A GS I T = 70C Continuous Drain Current, V -4.5V -9.2 A D A GS I Pulsed Drain Current -46 DM P T = 25C Power Dissipation 2.5 D A P T = 70C Power Dissipation 1.6 D A Linear Derating Factor 20 mW/C V Gate-to-Source Voltage 8 V GS T T Junction and Storage Temperature Range -55 to +150 C J, STG Thermal Resistance Parameter Max. Units R Maximum Junction-to-Ambient 50 C/W JA www.irf.com 1 8/25/06 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -12 V V = 0V, I = -250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.007 V/C Reference to 25C, I = -1mA (BR)DSS J D 14 V = -4.5V, I = -11.5A GS D R Static Drain-to-Source On-Resistance DS(on) 17.5 m V = -2.5V, I = -9.8A GS D 26 V = -1.8V, I = -8.1A GS D V Gate Threshold Voltage -0.4 -0.9 V V = V , I = -250A GS(th) DS GS D g Forward Transconductance 32 S V = -10V, I = -11.5A fs DS D -1.0 V = -9.6V, V = 0V DS GS I Drain-to-Source Leakage Current DSS A -25 V = -9.6V, V = 0V, T = 70C DS GS J Gate-to-Source Forward Leakage -100 V = -8V GS nA I GSS Gate-to-Source Reverse Leakage 100 V = 8V GS Q Total Gate Charge 38 I = -11.5A g D Q Gate-to-Source Charge 8.1 nC V = -6V gs DS Q Gate-to-Drain Mille) Charge 8.7 V = -4.5V gd GS t Turn-On Delay Time 8.8 13 V = -6V, V = -4.5V d(on) DD GS ns t Rise Time 8.8 13 I = -1.0A r D t Turn-Off Delay Time 291 437 R = 6 d(off) D t Fall Time 225 338 R = 6 f G C Input Capacitance 3529 V = 0V iss GS C Output Capacitance 1013 pF V = -10V oss DS C Reverse Transfer Capacitance 656 = 1.0MHz rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 2.5 (Body Diode) showing the I Pulsed Source Current integral reverse G SM 46 (Body Diode) p-n junction diode. S V Diode Forward Voltage -1.2 V T = 25C, I = -2.5A, V = 0V SD J S GS t Reverse Recovery Time 62 93 ns T = 25C, I = -2.5A rr J F Q Reverse Recovery Charge 61 92 C di/dt = -100A/s rr Repetitive rating pulse width limited by Surface mounted on 1 in square Cu board, t 10sec. max. junction temperature. Pulse width 400s duty cycle 2 www.irf.com