PD- 93885B IRF7459 SMPS MOSFET Applications HEXFET Power MOSFET l High Frequency DC-DC Isolated V R max I DSS DS(on) D Converters with Synchronous Rectification 20V 9.0m 12A for Telecom and Industrial use l High Frequency Buck Converters for Computer Processor Power Benefits A A 1 8 S D l Ultra-Low Gate Impedance 2 7 S D l Very Low R at 4.5V V DS(on) GS 3 6 l Fully Characterized Avalanche Voltage S D and Current 4 5 G D SO-8 Top View Absolute Maximum Ratings Symbol Parameter Max. Units V Drain-Source Voltage 20 V DS V Gate-to-Source Voltage 12 V GS I T = 25C Continuous Drain Current, V 10V 12 D A GS I T = 70C Continuous Drain Current, V 10V 10 A D A GS I Pulsed Drain Current 100 DM P T = 25C Maximum Power Dissipation 2.5 W D A P T = 70C Maximum Power Dissipation 1.6 W D A Linear Derating Factor 0.02 W/C T , T Junction and Storage Temperature Range -55 to + 150 C J STG Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Drain Lead 20 JL R Junction-to-Ambient 50 C/W JA Notes through are on page 8 www.irf.com 1 3/25/01IRF7459 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 20 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.024 V/C Reference to 25C, I = 1mA (BR)DSS J D 6.7 9.0 V = 10V, I = 12A GS D R Static Drain-to-Source On-Resistance DS(on) 8.0 11 m V = 4.5V, I = 9.6A GS D 11 22 V = 2.8V, I = 6.0A GS D V Gate Threshold Voltage 0.6 2.0 V V = V , I = 250A GS(th) DS GS D 20 V = 16V, V = 0V DS GS A I Drain-to-Source Leakage Current DSS 100 V = 16V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage 200 V = 12V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -12V GS Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions g Forward Transconductance 32 S V = 16V, I = 9.6A fs DS D Q Total Gate Charge 23 35 I = 9.6A g D Q Gate-to-Source Charge 6.6 10 nC V = 10V gs DS Q Gate-to-Drain Mille) Charge 6.3 9.5 V = 4.5V gd GS Q Output Gate Charge 17 26 V = 0V, V = 10V oss GS DS t Turn-On Delay Time 10 V = 10V, d(on) DD t Rise Time 4.5 I = 9.6A r D ns t Turn-Off Delay Time 20 R = 1.8 d(off) G t Fall Time 5.0 V = 4.5V f GS C Input Capacitance 2480 V = 0V iss GS C Output Capacitance 1030 V = 10V oss DS C Reverse Transfer Capacitance 130 pF = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 290 mJ AS I Avalanche Current 12 A AR Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 2.5 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 100 (Body Diode) p-n junction diode. S 0.84 1.3 V T = 25C, I = 9.6A, V = 0V J S GS V Diode Forward Voltage SD 0.69 T = 125C, I = 9.6A, V = 0V J S GS t Reverse Recovery Time 70 105 ns T = 25C, I = 9.6A, V = 15V rr J F R Q Reverse Recovery Charge 70 105 nC di/dt = 100A/s rr t Reverse Recovery Time 70 105 ns T = 125C, I = 9.6A, V =15V rr J F R Q Reverse Recovery Charge 75 113 nC di/dt = 100A/s rr 2 www.irf.com