PD- 93895 IRF7464 SMPS MOSFET HEXFET Power MOSFET Applications V R max I DSS DS(on) D l High frequency DC-DC converters 200V 0.73 1.2A Benefits l Low Gate to Drain Charge to Reduce A A 1 8 S D Switching Losses 2 7 l Fully Characterized Capacitance Including S D Effective C to Simplify Design, (See 3 6 OSS S D App. Note AN1001) 4 5 G D l Fully Characterized Avalanche Voltage SO-8 and Current Top View Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 1.2 D A GS I T = 70C Continuous Drain Current, V 10V 1.0 A D A GS I Pulsed Drain Current 10 DM P T = 25C Power Dissipation 2.5 W D A Linear Derating Factor 0.02 W/C V Gate-to-Source Voltage 30 V GS dv/dt Peak Diode Recovery dv/dt 6.8 V/ns T Operating Junction and -55 to + 150 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Typical SMPS Topologies l Telecom 48V input Forward Converter Notes through are on page 8 www.irf.com 1 4/25/00IRF7464 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 200 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.23 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 0.73 V = 10V, I = 0.72A DS(on) GS D V Gate Threshold Voltage 3.0 5.5 V V = V , I = 250A GS(th) DS GS D 25 V = 200V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 160V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage 100 V = 30V GS nA I GSS Gate-to-Source Reverse Leakage -100 V = -30V GS Dynamic T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions g Forward Transconductance 1.1 S V = 50V, I = 0.72A fs DS D Q Total Gate Charge 9.5 14 I = 0.72A g D Q Gate-to-Source Charge 2.5 3.8 nC V = 160V gs DS Q Gate-to-Drain Mille) Charge 4.6 6.9 V = 10V, gd GS t Turn-On Delay Time 11 V = 100V d(on) DD t Rise Time 9.5 I = 0.72A r D ns t Turn-Off Delay Time 18 R = 24 d(off) G t Fall Time 15 V = 10V f GS C Input Capacitance 280 V = 0V iss GS C Output Capacitance 52 V = 25V oss DS C Reverse Transfer Capacitance 14 pF = 1.0MHz rss C Output Capacitance 330 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 25 V = 0V, V = 160V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 48 V = 0V, V = 0V to 160V oss GS DS Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 68 mJ AS I Avalanche Current 1.2 A AR E Repetitive Avalanche Energy 0.25 mJ AR Thermal Resistance Parameter Typ. Max. Units R Maximum Junction-to-Ambient 50 C/W JA Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 2.3 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 10 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 0.72A, V = 0V SD J S GS t Reverse Recovery Time 60 90 ns T = 25C, I = 0.72A rr J F Q Reverse RecoveryCharge 130 200 nC di/dt = 100A/s rr 2 www.irf.com