IRF7470PbF SMPS MOSFET Applications HEXFET Power MOSFET High Frequency DC-DC Converters V R max I DSS DS(on) D with Synchronous Rectification 40V 13m 10A Lead-Free Benefits Ultra-Low Gate Impedance A A 1 8 Very Low R at 4.5V V D DS(on) GS S 2 7 S D Fully Characterized Avalanche Voltage and Current 3 6 S D 4 5 G D SO-8 Top View Absolute Maximum Ratings Symbol Parameter Max. Units V Drain-Source Voltage 40 V DS V Gate-to-Source Voltage 12 V GS I T = 25C Continuous Drain Current, V 10V 10 D A GS I T = 70C Continuous Drain Current, V 10V 8.5 A D A GS I Pulsed Drain Current 85 DM P T = 25C Maximum Power Dissipation 2.5 W D A P T = 70C Maximum Power Dissipation 1.6 W D A Linear Derating Factor 0.02 W/C T , T Junction and Storage Temperature Range -55 to + 150 C J STG Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Drain Lead 20 JL R Junction-to-Ambient 50 C/W JA Notes through are on page 8 www.irf.com 1 IRF7470PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.04 V/C Reference to 25C, I = 1mA (BR)DSS J D 9.0 13 V = 10V, I = 10A GS D R Static Drain-to-Source On-Resistance DS(on) 10 15 m V = 4.5V, I = 8.0A GS D 14.5 30 V = 2.8V, I = 5.0A GS D V Gate Threshold Voltage 0.8 2.0 V V = V , I = 250A GS(th) DS GS D 20 V = 32V, V = 0V DS GS A I Drain-to-Source Leakage Current DSS 100 V = 32V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage 200 V = 12V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -12V GS Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions g Forward Transconductance 27 S V = 20V, I = 8.0A fs DS D Q Total Gate Charge 29 44 I = 8.0A g D Q Gate-to-Source Charge 7.9 12 nC V = 20V gs DS Q Gate-to-Drain Mille) Charge 8.0 12 V = 4.5V gd GS Q Output Gate Charge 23 35 V = 0V, V = 16V oss GS DS t Turn-On Delay Time 10 V = 20V d(on) DD t Rise Time 1.9 I = 8.0A r D ns t Turn-Off Delay Time 21 R = 1.8 d(off) G t Fall Time 3.2 V = 4.5V f GS C Input Capacitance 3430 V = 0V iss GS C Output Capacitance 690 V = 20V oss DS C Reverse Transfer Capacitance 41 pF = 1.0MHz rss Avalanche Characteristics Symbol Parameter Typ. Max. Units E Single Pulse Avalanche Energy 300 mJ AS I Avalanche Current 8.0 A AR Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 2.3 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 85 S (Body Diode) p-n junction diode. 0.80 1.3 V T = 25C, I = 8.0A, V = 0V J S GS V Diode Forward Voltage SD 0.65 T = 125C, I = 8.0A, V = 0V J S GS t Reverse Recovery Time 72 110 ns T = 25C, I = 8.0A, V = 20V rr J F R Q Reverse Recovery Charge 130 200 nC di/dt = 100A/s rr t Reverse Recovery Time 76 110 ns T = 125C, I = 8.0A, V =20V rr J F R Q Reverse Recovery Charge 150 230 nC di/dt = 100A/s rr 2 www.irf.com