IRF7475PbF HEXFET Power MOSFET Applications V R max Qg DSS DS(on) High Frequency Point-of-Load Synchronous Buck Converter for 12V 15m V = 4.5V 19nC GS Applications in Networking & Computing Systems. A Lead-Free A 1 8 S D 2 7 S D Benefits 3 6 S D Very Low R at 4.5V V DS(on) GS 4 5 G D Ultra-Low Gate Impedance SO-8 Fully Characterized Avalanche Voltage Top View and Current Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 12 V DS V Gate-to-Source Voltage 12 GS Continuous Drain Current, V 10V I T = 25C 11 A GS D I T = 100C Continuous Drain Current, V 10V 7.0 A A GS D Pulsed Drain Current I 88 DM Power Dissipation P T = 25C 2.5 W D A Power Dissipation P T = 70C 1.6 D A Linear Derating Factor 0.02 W/C T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units R Junction-to-Drain Lead 20 C/W JL Junction-to-Ambient R 50 JA Notes through are on page 10 www.irf.com 1 09/21/04 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 12 V V = 0V, I = 250A GS D V /T DSS J Breakdown Voltage Temp. Coefficient 0.014 V/C Reference to 25C, I = 1mA D R DS(on) Static Drain-to-Source On-Resistance 11.5 15 V = 4.5V, I = 8.8A m GS D 20 50 V = 2.8V, I = 5.5A GS D V Gate Threshold Voltage 0.6 2.0 V V = V , I = 250A GS(th) DS GS D V Gate Threshold Voltage Coefficient 3.2 mV/C GS(th) I Drain-to-Source Leakage Current 100 A V = 9.6V, V = 0V DSS DS GS 250 V = 9.6V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 200 nA V = 12V GS Gate-to-Source Reverse Leakage -200 V = -12V GS gfs Forward Transconductance 22 S V = 6.0V, I = 8.8A DS D Q Total Gate Charge 13 19 g Q Pre-Vth Gate-to-Source Charge 2.6 V = 6.0V gs1 DS Q gs2 Post-Vth Gate-to-Source Charge 1.5 nC V = 4.5V GS Q gd Gate-to-Drain Charge 3.9 I = 7.0A D Q godr Gate Charge Overdrive 5.0 See Fig. 16 Q Switch Charge (Q + Q ) 5.4 sw gs2 gd Q Output Charge 17 nC V = 10V, V = 0V oss DS GS t Turn-On Delay Time 7.5 V = 6.0V, V = 4.5V d(on) DD GS t r Rise Time 33 I = 8.8A D t d(off) Turn-Off Delay Time 13 ns Clamped Inductive Load t f Fall Time 7.5 C Input Capacitance 1590 V = 0V iss GS C Output Capacitance 1310 pF V = 6.0V oss DS C Reverse Transfer Capacitance 260 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E AS 180 mJ Avalanche Current I AR 8.8 A Repetitive Avalanche Energy E 0.25 mJ AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I D S Continuous Source Current 11 MOSFET symbol (Body Diode) A showing the G I Pulsed Source Current 88 SM integral reverse S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 8.8A, V = 0V SD J S GS t rr Reverse Recovery Time 42 63 ns T = 25C, I = 8.8A, V = 10V DD J F Q di/dt = 100A/s rr Reverse Recovery Charge 44 66 nC t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com