IRF7478PbF SMPS MOSFET HEXFET Power MOSFET Applications V R max (m I DSS DS(on) D High frequency DC-DC converters 60V 26 V = 10V 4.2A GS Lead-Free 30 V = 4.5V 3.5A GS Benefits A A 1 8 S D Low Gate to Drain Charge to Reduce 2 7 Switching Losses S D Fully Characterized Capacitance Including 3 6 S D Effective C to Simplify Design, (See OSS 4 5 G D App. Note AN1001) Fully Characterized Avalanche Voltage SO-8 Top View and Current Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 7.0 D A GS I T = 70C Continuous Drain Current, V 10V 5.6 A D A GS I Pulsed Drain Current 56 DM P T = 25C Power Dissipation 2.5 W D A Linear Derating Factor 0.02 W/C V Gate-to-Source Voltage 20 V GS dv/dt Peak Diode Recovery dv/dt 3.7 V/ns T Operating Junction and -55 to + 150 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Drain Lead 20 JL R Junction-to-Ambient 50 C/W JA Notes through are on page 8 www.irf.com 1 09/21/04IRF7478PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.065 V/C Reference to 25C, I = 1mA (BR)DSS J D 20 26 V = 10V, I = 4.2A GS D R Static Drain-to-Source On-Resistance m DS(on) 23 30 V = 4.5V, I = 3.5A GS D V Gate Threshold Voltage 1.0 3.0 V V = V , I = 250A GS(th) DS GS D 20 V = 48V, V = 0V DS GS A I Drain-to-Source Leakage Current DSS 100 V = 48V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I GSS nA Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions g Forward Transconductance 17 S V = 50V, I = 4.2A fs DS D Q Total Gate Charge 21 31 I = 4.2A g D Q Gate-to-Source Charge 4.3 nC V = 48V gs DS Q Gate-to-Drain Mille) Charge 9.6 V = 4.5V gd GS t Turn-On Delay Time 7.7 V = 30V d(on) DD t Rise Time 2.6 I = 4.2A r D ns t Turn-Off Delay Time 44 R = 6.2 d(off) G t Fall Time 13 V = 10V f GS C Input Capacitance 1740 V = 0V iss GS C Output Capacitance 300 V = 25V oss DS C Reverse Transfer Capacitance 37 pF = 1.0MHz rss C Output Capacitance 1590 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 220 V = 0V, V = 48V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 410 V = 0V, V = 0V to 48V oss GS DS Symbol Parameter Typ. Max. Units E Single Pulse Avalanche Energy 140 mJ AS I Avalanche Current 4.2 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 2.3 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 56 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 4.2A, V = 0V SD J S GS t Reverse Recovery Time 52 78 ns T = 25C, I = 4.2A rr J F Q Reverse RecoveryCharge 100 150 nC di/dt = 100A/s rr 2 www.irf.com