StrongIRFET IRF7483MTRPbF DirectFET N-Channel Power MOSFET Application Brushed Motor drive applications V 40V DSS BLDC Motor drive applications R typ. 1.7m Battery powered circuits DS(on) Half-bridge and full-bridge topologies max 2.3m Synchronous rectifier applications Resonant mode power supplies I 135A D (Silicon Limited) OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters S S S DD Benefits S G Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA DirectFET ISOMETRIC Enhanced body diode dv/dt and di/dt Capability MF Lead-Free, RoHS Compliant Standard Pack Orderable Part Number Base part number Package Type Form Quantity IRF7483MPbF DirectFET MF Tape and Reel 4800 IRF7483MTRPbF 6.5 150 I = 81A D 125 5.0 100 3.5 75 T = 125C 50 J 2.0 25 T = 25C J 0.5 0 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 T , Case Temperature (C) V Gate -to -Source Voltage (V) C GS, Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On-Resistance vs. Gate Voltage 1 www.irf.com 2015 International Rectifier Submit Datasheet Feedback May 14, 2015 R , Drain-to -Source On Resistance (m) DS(on) I , Drain Current (A) D IRF7483MTRPbF Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 135 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 86 A D C GS I Pulsed Drain Current 540 DM P T = 25C Maximum Power Dissipation 74 W D C Linear Derating Factor 0.59 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and -55 to + 150 J C Storage Temperature Range T STG Avalanche Characteristics E Single Pulse Avalanche Energy 69 AS (Thermally limited) E Single Pulse Avalanche Energy 152 mJ AS (Thermally limited) E Single Pulse Avalanche Energy Tested Value 147 AS (tested) I Avalanche Current A AR See Fig.15,16, 23a, 23b E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Ambient 60 R JA Junction-to-Ambient 12.5 R JA Junction-to-Ambient 20 C/W R JA R Junction-to-Case 1.7 JC Junction-to-PCB Mounted R 1.0 J-PCB Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 32 mV/C Reference to 25C, I = 1.0mA D (BR)DSS J R Static Drain-to-Source On-Resistance 1.7 2.3 V = 10V, I = 81A DS(on) GS D m 3.4 V = 6.0V, I = 41A GS D V Gate Threshold Voltage 2.2 3.0 3.9 V V = V , I = 100A GS(th) DS GS D 1.0 V = 40V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V = 40V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 1.2 G Notes: Mounted on minimum footprint full size board with metalized TC measured with thermocouple mounted to top (Drain) of part. back and with small clip heatsink. Used double sided cooling , mounting pad with large heatsink. Mounted to a PCB with small clip Mounted on minimum footprint full size Surface mounted on 1 in. square Cu heatsink (still air) board with metalized back and with board (still air). small clip heatsink (still air) 2 www.irf.com 2015 International Rectifier Submit Datasheet Feedback May 14, 2015