IRF7484 Typical Applications Relay replacement HEXFET Power MOSFET Anti-lock Braking System Air Bag V R max (m I DSS DS(on) D Benefits 40V 10 V = 7.0V 14A GS Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax A A 1 8 S D 2 7 S D Description 3 6 S D Specifically designed for Automotive applications, this 4 5 Stripe Planar design of HEXFET Power MOSFETs G D utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional SO-8 Top View features of this HEXFET power MOSFET are a 150C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 14 D A GS I T = 70C Continuous Drain Current, V 10V 11 A D A GS I Pulsed Drain Current 110 DM P T = 25C Power Dissipation 2.5 W D A Linear Derating Factor 0.02 W/C V Gate-to-Source Voltage 8.0 V GS E Single Pulse Avalanche Energy 230 mJ AS I Avalanche Current See Fig.16c, 16d, 19, 20 A AR E Repetitive Avalanche Energy mJ AR T T Junction and Storage Temperature Range -55 to + 150 C J, STG Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Drain Lead 20 JL R Junction-to-Ambient 50 C/W JA www.irf.com 1 IRF7484 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.040 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 10 m V = 7.0V, I = 14A DS(on) GS D V Gate Threshold Voltage 1.0 2.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 40 S V = 10V, I = 14A fs DS D 20 V = 40V, V = 0V DS GS I Drain-to-Source Leakage Current DSS 250 V = 32V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage 200 V = 8.0V GS Gate-to-Source Reverse Leakage -200 V = -8.0V GS Q Total Gate Charge 69 100 I = 14A g D Q Gate-to-Source Charge 9.0 nC V = 32V gs DS Q Gate-to-Drain Mille) Charge 16 V = 7.0V gd GS t Turn-On Delay Time 9.3 V = 20V d(on) DD t Rise Time 5.0 I = 1.0A r D t Turn-Off Delay Time 180 R = 6.2 d(off) G t Fall Time 58 V = 7.0V f GS C Input Capacitance 3520 V = 0V iss GS C Output Capacitance 660 pF V = 25V oss DS C Reverse Transfer Capacitance 76 = 1.0MHz rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 2.3 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 110 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.3 V T = 25C, I = 2.3A, V = 0V SD J S GS t Reverse Recovery Time 59 89 ns T = 25C, I = 2.3A rr J F Q Reverse Recovery Charge 110 170 nC di/dt = 100A/s rr Repetitive rating pulse width limited by I 14A, di/dt 140A/s, V V , SD DD (BR)DSS max. junction temperature. T 150C. J Pulse width 400s duty cycle Limited by T , see Fig.16c, 16d, 19, 20 for typical repetitive Jmax Surface mounted on 1 in square Cu board. avalanche performance. Starting T = 25C, L = 2.3mH, R = 25, J G I = 14A. (See Figure 12). AS 2 www.irf.com