IRF7490PbF HEXFET Power MOSFET Applications High frequency DC-DC converters V R max Q DSS DS(on) g Lead-Free 100V 39m V =10V 37nC GS Benefits Low Gate-to-Drain Charge to Reduce A A Switching Losses 1 8 S D Fully Characterized Capacitance Including 2 7 S D Effective C to Simplify Design, (See OSS 3 6 S D App. Note AN1001) 4 5 Fully Characterized Avalanche Voltage G D and Current SO-8 Top View Absolute Maximum Ratings Symbol Parameter Max. Units V Drain-Source Voltage 100 V DS V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 5.4 D A GS I T = 70C Continuous Drain Current, V 10V 4.3 A D A GS I Pulsed Drain Current 43 DM P T = 25C Maximum Power Dissipation 2.5 W D A P T = 70C Maximum Power Dissipation 1.6 D A Linear Derating Factor 20 mW/C T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Drain Lead 20 JL R Junction-to-Ambient 50 C/W JA Notes through are on page 9 www.irf.com 1 IRF7490PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.11 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 33 39 m V = 10V, I = 3.2A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D 20 V = 100V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 80V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage 200 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions g Forward Transconductance 8.0 S V = 50V, I = 3.2A fs DS D Q Total Gate Charge 37 56 I = 3.2A g D Q Gate-to-Source Charge 8.0 nC V = 50V gs DS Q Gate-to-Drain Mille) Charge 10 V = 10V, gd GS t Turn-On Delay Time 13 V = 100V d(on) DD t Rise Time 4.2 I = 3.2A r D ns t Turn-Off Delay Time 51 R = 9.1 d(off) G t Fall Time 11 V = 10V f GS C Input Capacitance 1720 V = 0V iss GS C Output Capacitance 220 V = 25V oss DS C Reverse Transfer Capacitance 25 pF = 1.0MHz rss C Output Capacitance 1650 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 130 V = 0V, V = 80V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 250 V = 0V, V = 0V to 80V oss GS DS Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 91 mJ AS I Avalanche Current 3.2 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 2.3 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 43 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 3.2A, V = 0V SD J S GS t Reverse Recovery Time 67 100 ns T = 25C, I = 3.2A rr J F Q Reverse RecoveryCharge 220 330 nC di/dt = 100A/s rr 2 www.irf.com