IRF7495
HEXFET Power MOSFET
V R max I
Applications
DSS DS(on) D
High frequency DC-DC converters
22m @V = 10V
100V 7.3A
GS
Benefits
A
A
Low Gate to Drain Charge to Reduce
1 8
S D
Switching Losses
2 7
S D
Fully Characterized Capacitance Including
3 6
S D
Effective C to Simplify Design, (See
OSS
App. Note AN1001) 4 5
G D
Fully Characterized Avalanche Voltage
SO-8
and Current
Top View
Absolute Maximum Ratings
Parameter Max. Units
V
DS Drain-to-Source Voltage 100 V
V
Gate-to-Source Voltage 20
GS
I @ T = 25C Continuous Drain Current, V @ 10V 7.3 A
D A GS
I @ T = 100C 4.6
Continuous Drain Current, V @ 10V
D A GS
I
Pulsed Drain Current 58
DM
P @T = 25C 2.5 W
D A Maximum Power Dissipation
Linear Derating Factor 0.02 W/C
dv/dt Peak Diode Recovery dv/dt 7.3 V/ns
T
Operating Junction and -55 to + 150 C
J
T Storage Temperature Range
STG
Thermal Resistance
Parameter Typ. Max. Units
R
JL Junction-to-Drain Lead 20 C/W
Junction-to-Ambient (PCB Mount)
R
50
JA
Notesthrough are on page 8
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04/12/06IRF7495
Static @ T = 25C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A
GS D
V /T
(BR)DSS J Breakdown Voltage Temp. Coefficient 0.10 V/C Reference to 25C, I = 1mA
D
R
DS(on) Static Drain-to-Source On-Resistance 18 22 m V = 10V, I = 4.4A
GS D
V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A
GS(th)
DS GS D
I
Drain-to-Source Leakage Current 20 A V = 100V, V = 0V
DSS
DS GS
250 V = 80V, V = 0V, T = 125C
DS GS J
I
GSS Gate-to-Source Forward Leakage 200 nA V = 20V
GS
Gate-to-Source Reverse Leakage -200 V = -20V
GS
Dynamic @ T = 25C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 11 S V = 25V, I = 4.4A
DS D
Q
g Total Gate Charge 34 51 I = 4.4A
D
Q
gs Gate-to-Source Charge 6.3 nC V = 50V
DS
Q
gd Gate-to-Drain Mille) Charge 11.7 V = 10V
GS
t Turn-On Delay Time 8.7 V = 50V
d(on)
DD
t
Rise Time 13 I = 4.4A
r
D
t
d(off) Turn-Off Delay Time 10 ns R = 6.2
G
t
f Fall Time 36 V = 10V
GS
C
iss Input Capacitance 1530 V = 0V
GS
C
oss Output Capacitance 250 V = 25V
DS
C
rss Reverse Transfer Capacitance 110 pF = 1.0MHz
C
Output Capacitance 980 V = 0V, V = 1.0V, = 1.0MHz
oss
GS DS
C
oss Output Capacitance 160 V = 0V, V = 80V, = 1.0MHz
GS DS
C eff.
oss Effective Output Capacitance 240 V = 0V, V = 0V to 80V
GS DS
Avalanche Characteristics
Parameter Typ. Max. Units
Single Pulse Avalanche Energy
E
180 mJ
AS
Avalanche Current
I
4.4 A
AR
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
D
I
Continuous Source Current 2.3 MOSFET symbol
S
(Body Diode) A showing the
G
I
Pulsed Source Current 58 integral reverse
SM
S
(Body Diode) p-n junction diode.
V Diode Forward Voltage 1.3 V T = 25C, I = 4.4A, V = 0V
SD J S GS
t Reverse Recovery Time 42 ns T = 25C, I = 4.4A, V = 25V
rr DD
J F
Q di/dt = 100A/s
Reverse Recovery Charge 73 nC
rr
t
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
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