PD - 95243 HEXFET Power MOSFET Trench Technology 1 8 S1 D1 Ultra Low On-Resistance V = 20V Dual N-Channel MOSFET 2 7 DSS G1 D1 Very Small SOIC Package 3 6 S2 D2 Low Profile (<1.1mm) 4 5 Available in Tape & Reel G2 D2 R = 0.030 DS(on) Lead-Free Top View Description New trench HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The new Micro8 package has half the footprint area of the standard SO-8. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily Micro8 into extremely thin application environments such as portable electronics and PCMCIA cards. Parameter Max. Units V Drain- Source Voltage 20 V DS I T = 25C Continuous Drain Current, V 4.5V 5.4 D A GS I T = 70C Continuous Drain Current, V 4.5V 4.3 A D A GS I Pulsed Drain Current 40 DM P T = 25C Power Dissipation 1.3 D A P T = 70C Power Dissipation 0.80 D A Linear Derating Factor 10 mW/C E Single Pulse Avalanche Energy 33 mJ AS V Gate-to-Source Voltage 12 V GS T T Junction and Storage Temperature Range -55 to + 150 C J, STG Thermal Resistance Parameter Max. Units R Maximum Junction-to-Ambient 100 C/W JA www.irf.com 1 5/13/04 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 20 V V = 0V, I = 250uA (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.01 V/C Reference to 25C, I = 1mA (BR)DSS J D 0.030 V = 4.5V, I = 5.4A GS D R Static Drain-to-Source On-Resistance DS(on) 0.045 V = 2.5V, I = 4.6A GS D V Gate Threshold Voltage 0.60 1.2 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 13 S V = 10V, I = 5.4A fs DS D 1.0 V = 16V, V = 0V DS GS I Drain-to-Source Leakage Current DSS 25 V = 16V, V = 0V, T = 70C DS GS J Gate-to-Source Forward Leakage 100 V = 12V GS Gate-to-Source Reverse Leakage -100 V = -12V GS Q Total Gate Charge 18 26 I = 5.4A g D Q Gate-to-Source Charge 3.4 5.1 nC V = 16V gs DS Q Gate-to-Drain Mille) Charge 3.4 5.1 V = 4.5V gd GS t Turn-On Delay Time 8.5 V = 10V d(on) DD t Rise Time 11 I = 1.0A r D t Turn-Off Delay Time 36 R = 6.0 d(off) G t Fall Time 16 R = 10 f D C Input Capacitance 1310 V = 0V iss GS C Output Capacitance 180 pF V = 15V oss DS C Reverse Transfer Capacitance 150 = 1.0MHz rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 1.3 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 40 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.2 V T = 25C, I = 1.3A, V = 0V SD J S GS t Reverse Recovery Time 19 29 ns T = 25C, I = 1.3A rr J F Q Reverse RecoveryCharge 13 20 nC di/dt = 100A/s rr Repetitive rating pulse width limited by When mounted on 1 inch square copper board, t<10 sec max. junction temperature. Starting T = 25C, L = 2.6mH J Pulse width 400s duty cycle 2% R = 25, I = 5.0A. (See Figure 10) G AS 2 www.irf.com