PD - 9.1262D IRF7603 HEXFET Power MOSFET l Generation V Technology A A l Ultra Low On-Resistance 1 8 S D l N-Channel MOSFET V = 30V DSS 2 7 S D l Very Small SOIC Package 3 6 S D l Low Profile (<1.1mm) 4 l Available in Tape & Reel 5 G D R = 0.035 DS(on) l Fast Switching Top V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The new Micro8 package, with half the footprint area of the Micro8 standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 5.6 D A GS I T = 70C Continuous Drain Current, V 10V 4.5 A D A GS I Pulsed Drain Current 30 DM P T = 25C Power Dissipation 1.8 W D A Linear Derating Factor 14 mW/C V Gate-to-Source Voltage 20 V GS dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Junction and Storage Temperature Range -55 to + 150 C TJ, STG Thermal Resistance Parameter Typ. Max. Units R Maximum Junction-to-Ambient 70 C/W JA All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective only for product marked with Date Code 505 or later . 8/25/97IRF7603 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.029 V/C Reference to 25C, I = 1mA (BR)DSS J D 0.035 V = 10V, I = 3.7A GS D R Static Drain-to-Source On-Resistance DS(on) 0.060 V = 4.5V, I = 1.9A GS D V Gate Threshold Voltage 1.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 4.3 S V = 10V, I = 1.9A fs DS D 1.0 V = 24V, V = 0V DS GS I Drain-to-Source Leakage Current DSS A 25 V = 24V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage -100 V = -20V GS I nA GSS Gate-to-Source Reverse Leakage 100 V = 20V GS Q Total Gate Charge 18 27 I = 3.7A g D Q Gate-to-Source Charge 2.4 3.6 nC V = 24V gs DS Q Gate-to-Drain Mille) Charge 5.6 8.4 V = 10V, See Fig. 6 and 9 gd GS t Turn-On Delay Time 5.7 V = 15V d(on) DD t Rise Time 28 I = 3.7A r D ns t Turn-Off Delay Time 18 R = 6.2 d(off) G t Fall Time 12 R = 4.0, See Fig. 10 f D C Input Capacitance 520 V = 0V iss GS C Output Capacitance 200 pF V = 25V oss DS C Reverse Transfer Capacitance 80 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 1.8 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 30 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.2 V T = 25C, I = 3.7A, V = 0V SD J S GS t Reverse Recovery Time 53 80 ns T = 25C, I = 3.7A rr J F Q Reverse RecoveryCharge 87 130 nC di/dt = 100A/s rr Notes: Repetitive rating pulse width limited by Pulse width 300s duty cycle 2%. max. junction temperature. ( See fig. 11 ) I 3.7A, di/dt 130A/s, V V , Surface mounted on FR-4 board, t 10sec. SD DD (BR)DSS T 150C J