PD-95634 HEXFET Power MOSFET Trench Technology A 1 8 Ultra Low On-Resistance S D V = -20V 2 7 P-Channel MOSFET DSS S D Very Small SOIC Package 3 6 S D Low Profile (<1.1mm) 4 5 Available in Tape & Reel G D R = 0.020 DS(on) Lead-Free Top View Description New trench HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The new Micro8 package has half the footprint area of the standard SO-8. This makes the Micro8 an ideal package for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. Parameter Max. Units V Drain- Source Voltage -20 V DS I T = 25C Continuous Drain Current, V -4.5V -8.2 D A GS I T = 70C Continuous Drain Current, V -4.5V -6.6 A D A GS I Pulsed Drain Current -66 DM P T = 25C Power Dissipation 1.8 D A P T = 70C Power Dissipation 1.15 D A Linear Derating Factor 10 mW/C E Single Pulse Avalanche Energy 115 mJ AS V Gate-to-Source Voltage 12 V GS T T Junction and Storage Temperature Range -55 to + 150 C J, STG Thermal Resistance Parameter Max. Units R Maximum Junction-to-Ambient 70 C/W JA www.irf.com 1 8/11/04 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -20 V V = 0V, I = -250uA (BR)DSS GS D V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient -0.01 V/C Reference to 25C, I = -1mA D 0.020 V = -4.5V, I = -7.0A GS D R Static Drain-to-Source On-Resistance DS(on) 0.040 V = -2.5V, I = -5.1A GS D V Gate Threshold Voltage -0.60 -1.2 V V = V , I = -250A GS(th) DS GS D g Forward Transconductance 14.5 S V = -10V, I = -7.0A fs DS D -1.0 V = -16V, V = 0V DS GS I Drain-to-Source Leakage Current DSS -25 V = -16V, V = 0V, T = 70C DS GS J Gate-to-Source Forward Leakage -100 V = -12V GS Gate-to-Source Reverse Leakage 100 V = 12V GS Q Total Gate Charge 30 45 I = -6.0A g D Q Gate-to-Source Charge 5.0 7.5 nC V = -10V gs DS Q Gate-to-Drain Mille) Charge 7.0 10.5 V = -5.0V gd GS t Turn-On Delay Time 11 V = -10V d(on) DD t Rise Time 100 I = -6.0A r D t Turn-Off Delay Time 125 R = 6.2 d(off) G t Fall Time 172 R = 1.64 f D C Input Capacitance 2520 V = 0V iss GS C Output Capacitance 615 pF V = -10V oss DS C Reverse Transfer Capacitance 375 = 1.0MHz rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S -1.8 (Body Diode) showing the G I Pulsed Source Current integral reverse SM -66 (Body Diode) p-n junction diode. S V Diode Forward Voltage -1.2 V T = 25C, I = -7.0A, V = 0V SD J S GS t Reverse Recovery Time 70 105 ns T = 25C, I = -2.5A rr J F Q Reverse RecoveryCharge 50 75 nC di/dt = 100A/s rr Repetitive rating pulse width limited by When mounted on 1 inch square copper board, t<10 sec max. junction temperature. Starting T = 25C, L = 17.8mH J R = 25, I = -3.6A. (See Figure 10) G AS 2 www.irf.com