PD - 94221 B IRF7703 HEXFET Power MOSFET Ultra Low On-Resistance V R max (m I DSS DS(on) D P-Channel MOSFET -40V 28 V = -10V -6.0A GS Very Small SOIC Package 45 V = -4.5V -4.8A GS Low Profile (< 1.2mm) Available in Tape & Reel Description HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex- tremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that Inter- national Rectifier is well known for, provides the de- signer with an extremely efficient and reliable device for battery and load management. TSSOP-8 The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards. Parameter Max. Units V Drain- Source Voltage -40 V DS I T = 25C Continuous Drain Current, V -10V -6.0 D A GS I T = 70C Continuous Drain Current, V -10V -4.7 A D A GS I Pulsed Drain Current -24 DM P T = 25C Power Dissipation 1.5 D A P T = 70C Power Dissipation 0.96 D A Linear Derating Factor 0.012 W/C V Gate-to-Source Voltage 20 V GS T T Junction and Storage Temperature Range -55 to + 150 C J, STG Thermal Resistance Parameter Max. Units R Maximum Junction-to-Ambient 83 C/W JA www.irf.com 1 04/22/05 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -40 V V = 0V, I = -250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.030 V/C Reference to 25C, I = -1mA (BR)DSS J D 28 V = -10V, I = -6.0A GS D R Static Drain-to-Source On-Resistance DS(on) m 45 V = -4.5V, I = -4.8A GS D V Gate Threshold Voltage -1.0 -3.0 V V = V , I = -250A GS(th) DS GS D g Forward Transconductance 10 S V = -10V, I = -6.0A fs DS D -15 V = -32V, V = 0V DS GS I Drain-to-Source Leakage Current DSS -25 V = -32V, V = 0V, T = 70C DS GS J Gate-to-Source Forward Leakage -100 V = -20V GS Gate-to-Source Reverse Leakage 100 V = 20V GS Q Total Gate Charge 41 62 I = -6.0A g D Q Gate-to-Source Charge 16 25 nC V = -20V gs DS Q Gate-to-Drain Mille) Charge 16 24 V = -4.5V gd GS t Turn-On Delay Time 43 V = -20V d(on) DD t Rise Time 405 I = -1.0A r D t Turn-Off Delay Time 155 R = 6.0 d(off) G t Fall Time 77 V = -10V f GS C Input Capacitance 5220 V = 0V iss GS C Output Capacitance 416 pF V = -25V oss DS C Reverse Transfer Capacitance 337 = 1.0kHz rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 1.5 (Body Diode) showing the I Pulsed Source Current integral reverse G SM 24 (Body Diode) p-n junction diode. S V Diode Forward Voltage -1.2 V T = 25C, I = -1.5A, V = 0V SD J S GS t Reverse Recovery Time 34 51 ns T = 25C, I = -1.5A rr J F Q Reverse Recovery Charge 56 84 nC di/dt = -100A/s rr Repetitive rating pulse width limited by Surface mounted on 1 in square Cu board max. junction temperature. Pulse width 400s duty cycle 2 www.irf.com