PD -93996 IRF7707 HEXFET Power MOSFET l Ultra Low On-Resistance V R max I DSS DS(on) D l P-Channel MOSFET -20V 22m V = -4.5V -7.0A GS l Very Small SOIC Package 33m V = -2.5V -6.0A GS l Low Profile (< 1.2mm) l Available in Tape & Reel Description 1 8 D HEXFET Power MOSFETs from International Rectifier 2 7 utilize advanced processing techniques to achieve ex- 3 6 tremely low on-resistance per silicon area. This benefit, G S 4 5 combined with the ruggedized device design, that Inter- national Rectifier is well known for, provides thedesigner 1 = D 8 = D with an extremely efficient and reliable device for 2 = S 7 = S 3 = S 6 = S battery and load management. 4 = G 5 = D TSSOP-8 The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards. Absolute Maximum Ratings Parameter Max. Units V Drain-Source Voltage -20 V DS I T = 25C Continuous Drain Current, V -4.5V -7.0 D A GS I T = 70C Continuous Drain Current, V -4.5V -5.7 A D A GS I Pulsed Drain Current -28 DM P T = 25C Maximum Power Dissipation 1.5 W D A P T = 70C Maximum Power Dissipation 1.0 W D A Linear Derating Factor 0.01 W/C V Gate-to-Source Voltage 12 V GS T , T Junction and Storage Temperature Range -55 to +150 C J STG Thermal Resistance Parameter Max. Units R Maximum Junction-to-Ambient 83 C/W JA www.irf.com 1 10/04/00IRF7707 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -20 V V = 0V, I = -250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.012 V/C Reference to 25C, I = -1mA (BR)DSS J D 14.3 22 V = -4.5V, I = -7.0A GS D R Static Drain-to-Source On-Resistance DS(on) m 18.9 33 V = -2.5V, I = -6.0A GS D V Gate Threshold Voltage -0.45 -1.2 V V = V , I = -250A GS(th) DS GS D g Forward Transconductance 15 S V = -10V, I = -7.0A fs DS D -1.0 V = -16V, V = 0V DS GS I Drain-to-Source Leakage Current DSS A -25 V = -16V, V = 0V, T = 70C DS GS J Gate-to-Source Forward Leakage -100 V = -12V GS I nA GSS Gate-to-Source Reverse Leakage 100 V = 12V GS Q Total Gate Charge 31 47 I = -7.0A g D Q Gate-to-Source Charge 6.4 nC V = -16V gs DS Q Gate-to-Drain Mille) Charge 10 V = -4.5V gd GS t Turn-On Delay Time 11 17 V = -10V d(on) DD t Rise Time 54 81 I = -1.0A r D ns t Turn-Off Delay Time 134 201 R = 6.0 d(off) G t Fall Time 138 207 V = -4.5V f GS C Input Capacitance 2361 V = 0V iss GS C Output Capacitance 512 pF V = -15V oss DS C Reverse Transfer Capacitance 323 = 1.0MHz rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S -1.5 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM -28 (Body Diode) p-n junction diode. S V Diode Forward Voltage -1.2 V T = 25C, I = -1.5A, V = 0V SD J S GS t Reverse Recovery Time 142 213 ns T = 25C, I = -1.5A rr J F Q Reverse Recovery Charge 147 221 nC di/dt = -100A/s rr Notes: Repetitive rating pulse width limited by When mounted on 1 inch square copper board, t < 10sec. max. junction temperature. Pulse width 300s duty cycle 2%. 2 www.irf.com