PD-96016A IRF7752PbF HEXFET Power MOSFET Ultra Low On-Resistance V R max I DSS DS(on) D Dual N-Channel MOSFET 30V 0.030 V = 10V 4.6A GS Very Small SOIC Package 0.036 V = 4.5V 3.9A GS Low Profile (< 1.1mm) Available in Tape & Reel Lead-Free Description HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex- tremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that Inter- national Rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for use in battery and load management. TSSOP-8 The TSSOP-8 package, has 45% less footprint area of the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the TSSOP-8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. Absolute Maximum Ratings Parameter Max. Units V Drain- Source Voltage 30 V DS I T = 25C Continuous Drain Current, V 10V 4.6 D A GS I T = 70C Continuous Drain Current, V 10V 3.7 A D A GS I Pulsed Drain Current 37 DM P T = 25C Power Dissipation 1.0 D A P T = 70C Power Dissipation 0.64 D A Linear Derating Factor 8.0 mW/C V Gate-to-Source Voltage 12 V GS T T Junction and Storage Temperature Range -55 to + 150 C J, STG Thermal Resistance Parameter Max. Units R Maximum Junction-to-Ambient 125 C/W JA www.irf.com 1 05/14/09 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 30 V V = 0V, I = -250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.030 V/C Reference to 25C, I = 1mA (BR)DSS J D 0.030 V = 10V, I = 4.6A GS D R Static Drain-to-Source On-Resistance DS(on) 0.036 V = 4.5V, I = 3.9A GS D V Gate Threshold Voltage 0.60 2.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 12 S V = 10V, I = 4.6A fs DS D 20 V = 24V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 100 V = 24V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage -200 V = -12V GS nA Gate-to-Source Reverse Leakage 200 V = 12V GS Q Total Gate Charge 9.0 I = 4.6A g D Q Gate-to-Source Charge 2.5 nC V = 24V gs DS Q Gate-to-Drain Mille) Charge 2.6 V = 4.5V gd GS t Turn-On Delay Time 7.2 V = 15V d(on) DD t Rise Time 9.1 I = 1.0A r D ns t Turn-Off Delay Time 25 R = 6.0 d(off) G t Fall Time 11 V = 10V f GS C Input Capacitance 861 V = 0V iss GS C Output Capacitance 210 pF V = 25V oss DS C Reverse Transfer Capacitance 25 = 1.0MHz rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 0.91 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 37 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.3 V T = 25C, I = 0.91A, V = 0V SD J S GS t Reverse Recovery Time 25 ns T = 25C, I = 0.91A rr J F Q Reverse RecoveryCharge 23 nC di/dt = 100A/s rr Repetitive rating pulse width limited by When mounted on 1 inch square copper board, t<10 sec max. junction temperature. Pulse width 300s duty cycle 2 www.irf.com