IRF7756 HEXFET Power MOSFET Ultra Low On-Resistance V R max I DSS DS(on) D Dual P-Channel MOSFET -12V 0.040 V = -4.5V 4.3A GS Very Small SOIC Package 0.058 V = -2.5V 3.4A GS Low Profile (< 1.2mm) 0.087 V = -1.8V 2.2A GS Available in Tape & Reel Description 8 1 HEXFET Power MOSFETs from International Rectifier 7 2 utilize advanced processing techniques to achieve ex- 3 6 tremely low on-resistance per silicon area. This benefit, 4 5 combined with the ruggedized device design, that Inter- national Rectifier is well known for, provides thedesigner 1 = D1 8 = D2 with an extremely efficient and reliable device for 2 = S1 7 = S2 3 = S1 6 = S2 battery and load management. 4 = G1 5 = G2 TSSOP-8 The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards. Absolute Maximum Ratings Parameter Max. Units V Drain-Source Voltage -12 V DS I T = 25C Continuous Drain Current, V -4.5V -4.3 D A GS I T = 70C Continuous Drain Current, V -4.5V -3.5 A D A GS I Pulsed Drain Current -17 DM P T = 25C Maximum Power Dissipation 1.0 W D A P T = 70C Maximum Power Dissipation 0.64 W D A Linear Derating Factor 8.0 mW/C V Gate-to-Source Voltage 8.0 V GS T , T Junction and Storage Temperature Range -55 to +150 C J STG Thermal Resistance Parameter Max. Units R Maximum Junction-to-Ambient 125 C/W JA www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -12 V V = 0V, I = -250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient -0.006 V/C Reference to 25C, I = -1mA (BR)DSS J D 0.040 V = -4.5V, I = -4.3A GS D R Static Drain-to-Source On-Resistance DS(on) 0.058 V = -2.5V, I = -3.4A GS D 0.087 V = -1.8V, I = -2.2A GS D V Gate Threshold Voltage -0.4 -0.9 V V = V , I = -250A GS(th) DS GS D g Forward Transconductance 13 S V = -10V, I = -4.3A fs DS D -1.0 V = -9.6V, V = 0V DS GS I Drain-to-Source Leakage Current DSS A -25 V = -9.6V, V = 0V, T = 70C DS GS J Gate-to-Source Forward Leakage -100 V = -8.0V GS I nA GSS Gate-to-Source Reverse Leakage 100 V = 8.0V GS Q Total Gate Charge 12 18 I = -4.3A g D Q Gate-to-Source Charge 1.8 2.7 nC V = -6.0V gs DS Q Gate-to-Drain Mille) Charge 2.9 4.4 V = -4.5V gd GS t Turn-On Delay Time 12 V = -6.0V, d(on) DD ns t Rise Time 18 I = -1.0A r D t Turn-Off Delay Time 160 R = 6.0 d(off) G t Fall Time 170 V = -4.5V f GS C Input Capacitance 1400 V = 0V iss GS C Output Capacitance 310 pF V = -10V oss DS C Reverse Transfer Capacitance 240 = 1.0kHz rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S -1.0 (Body Diode) showing the G I Pulsed Source Current integral reverse SM -17 (Body Diode) p-n junction diode. S V Diode Forward Voltage -1.2 V T = 25C, I = -1.0A, V = 0V SD J S GS t Reverse Recovery Time 35 53 ns T = 25C, I = -1.0A rr J F Q Reverse Recovery Charge 20 30 nC di/dt = -100A/s rr Repetitive rating pulse width limited by Surface mounted on FR-4 board, 10sec max. junction temperature. Pulse width 400s duty cycle 2 www.irf.com