PD - 94174 IRF7757 HEXFET Power MOSFET Ultra Low On-Resistance V R max (m))))) I DSS DS(on) D Dual N-Channel MOSFET 20V 35 V = 4.5V 4.8A GS Very Small SOIC Package 40 V = 2.5V 3.8A GS Low Profile (< 1.2mm) Available in Tape & Reel Common Drain Configuration Description HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex- 1 8 tremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that Inter- 2 7 national Rectifier is well known for, provides the de- 3 6 signer with an extremely efficient and reliable device 4 5 for battery and load management. 1 = S1 8 = D 2 = G1 7 = D 3 = S2 6 = D The TSSOP-8 package has 45% less footprint area than 4 = G2 5 = D TSSOP-8 the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards. Absolute Maximum Ratings Parameter Max. Units V Drain- Source Voltage 20 V DS I T = 25C Continuous Drain Current, V 4.5V 4.8 D A GS I T = 70C Continuous Drain Current, V 4.5V 3.9 A D A GS I Pulsed Drain Current 19 DM P T = 25C Power Dissipation 1.2 D A W P T = 70C Power Dissipation 0.76 D A Linear Derating Factor 9.5 mW/C V Gate-to-Source Voltage 12 V GS T T Junction and Storage Temperature Range -55 to + 150 C J, STG Thermal Resistance Parameter Max. Units R Maximum Junction-to-Ambient 105 C/W JA www.irf.com 1 05/03/01IRF7757 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 20 VV = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.013 V/C Reference to 25C, I = 1mA (BR)DSS J D 35 V = 4.5V, I = 4.8A GS D R Static Drain-to-Source On-Resistance DS(on) m 40 V = 2.5V, I = 3.8A GS D V Gate Threshold Voltage 0.60 1.2 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 11 SV = 10V, I = 4.8A fs DS D 1.0 V = 16V, V = 0V DS GS I Drain-to-Source Leakage Current DSS A 25 V = 16V, V = 0V, T = 70C DS GS J Gate-to-Source Forward Leakage 100 V = 12V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -12V GS Q Total Gate Charge 15 23 I = 4.8A g D Q Gate-to-Source Charge 2.5 nC V = 16V gs DS Q Gate-to-Drain Mille) Charge 4.8 V = 4.5V gd GS t Turn-On Delay Time 9.5 V = 10V d(on) DD t Rise Time 9.2 I = 1.0A r D ns t Turn-Off Delay Time 36 R = 6.2 d(off) G t Fall Time 14 V = 4.5V f GS C Input Capacitance 1340 V = 0V iss GS C Output Capacitance 180 pF V = 15V oss DS C Reverse Transfer Capacitance 132 = 1.0MHz rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 1.2 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 19 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.2 V T = 25C, I = 1.2A, V = 0V SD J S GS t Reverse Recovery Time 20 30 ns T = 25C, I = 1.2A rr J F Q Reverse Recovery Charge 10 15 nC di/dt = 100A/s rr Notes: Repetitive rating pulse width limited by Surface mounted on 1 in square Cu board max. junction temperature. Pulse width 400s duty cycle 2%. 2 www.irf.com