DirectFET Power MOSFET RoHS Compliant, Halogen Free Lead-Free (Qualified up to 260C Reflow) Ideal for High Performance Isolated Converter V V R DSS GS DS(on) Primary Switch Socket 75V min 20V max 1.8m 10V Optimized for Synchronous Rectification Q Q V g tot gd gs(th) Low Conduction Losses 200nC 62nC 3.0V High Cdv/dt Immunity Low Profile (<0.7mm) S S Dual Sided Cooling Compatible S S Compatible with existing Surface Mount Techniques D G D S S S S Industrial Qualified DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline SB SC M2 M4 L4 L6 L8 Description TM The IRF7759L2TR/TR1PbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the 2 lowest on-state resistance in a package that has a footprint smaller than a D PAK and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems. The IRF7759L2TR/TR1PbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance power converters. Standard Pack Orderable part number Package Type Note Form Quantity IRF7759L2TRPbF DirectFET2 Large Can Tape and Reel 4000T suffix IRF7759L2TR1PbF DirectFET2 Large Can Tape and Reel 1000TR1 suffix EOL notice 264 Absolute Maximum Ratings Parameter Max. Units V 75 Drain-to-Source Voltage DS V V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V (Silicon Limited) 160 I T = 25C C GS D Continuous Drain Current, V 10V (Silicon Limited) 113 I T = 100C GS C D (Silicon Limited) I T = 25C Continuous Drain Current, V 10V 26 A GS D A Continuous Drain Current, V 10V (Package Limited) 375 I T = 25C C GS D Pulsed Drain Current 640 I DM E Single Pulse Avalanche Energy 257 mJ AS I 96 Avalanche Current A AR 8 1.95 I = 96A D T = 25C A V = 7.0V GS 6 1.85 V = 8.0V GS T = 125C 4 J V = 10V GS 1.75 2 V = 15V GS T = 25C J 0 1.65 2 4 6 8 10 12 14 16 18 20 15 30 45 60 75 90 105 V Gate -to -Source Voltage (V) GS, I , Drain Current (A) D Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical On-Resistance vs. Drain Current Click on this section to link to the appropriate technical paper. T measured with thermocouple mounted to top (Drain) of part. C Click on this section to link to the DirectFET Website. Repetitive rating pulse width limited by max. junction temperature. Surface mounted on 1 in. square Cu board, steady state. Starting T = 25C, L = 0.056mH, R = 25, I = 96A. J G AS R , Drain-to -Source On Resistance (m ) DS(on) Typical R ( m) DS(on) Static T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units BV V = 0V, I = 250 A Drain-to-Source Breakdown Voltage 75 V DSS GS D V / T Reference to 25C, I = 2mA Breakdown Voltage Temp. Coefficient 0.02 V/C DSS J D V = 10V, I = 96A R Static Drain-to-Source On-Resistance 1.8 2.3 DS(on) m GS D V Gate Threshold Voltage 2.0 3.0 4.0 V GS(th) V = V , I = 250 A DS GS D V /T Gate Threshold Voltage Coefficient -11 mV/C GS(th) J I V = 75V, V = 0V Drain-to-Source Leakage Current 20 DSS DS GS A V = 60V, V = 0V, T = 125C 250 DS GS J I V = 20V Gate-to-Source Forward Leakage 100 GSS GS nA V = -20V Gate-to-Source Reverse Leakage -100 GS V = 25V, I = 96A gfs Forward Transconductance 74 S DS D Q Total Gate Charge 200 300 g V = 38V Q Pre-Vth Gate-to-Source Charge 37 DS gs1 Q V = 10V Post-Vth Gate-to-Source Charge 11 gs2 GS nC I = 96A Q Gate-to-Drain Charge 62 93 D gd Q Gate Charge Overdrive 91 See Fig. 9 godr Q Switch Charge (Q + Q ) 73 sw gs2 gd Q V = 16V, V = 0V Output Charge 60 nC oss DS GS R Gate Resistance 1.1 G t V = 38V, V = 10V Turn-On Delay Time 18 d(on) DD GS t I = 96A Rise Time 37 r D ns t Turn-Off Delay Time 80 R =1.8 d(off) G t Fall Time 33 f V = 0V C Input Capacitance 12222 GS iss C V = 25V Output Capacitance 1465 oss DS C pF = 1.0MHz Reverse Transfer Capacitance 609 rss V = 0V, V = 1.0V, f=1.0MHz C Output Capacitance 7457 oss GS DS V = 0V, V = 60V, f=1.0MHz C Output Capacitance 955 GS DS oss Diode Characteristics Parameter Min. Typ. Max. Units Conditions I MOSFET symbol Continuous Source Current S 160 (Body Diode) showing the A I integral reverse Pulsed Source Current SM 640 (Body Diode) p-n junction diode. V T = 25C, I = 96A, V = 0V Diode Forward Voltage 1.3 V SD J S GS T = 25C, I = 96A, V = 38V t Reverse Recovery Time 64 96 ns J F DD rr Q di/dt = 100A/s Reverse Recovery Charge 150 225 nC rr Repetitive rating pulse width limited by max. junction temperature. Pulse width 400s duty cycle 2%.