DirectFET Power MOSFET RoHS Compliant, Halogen Free Lead-Free (Qualified up to 260C Reflow) Ideal for High Performance Isolated Converter V V R DSS GS DS(on) Primary Switch Socket 100V min 20V max 2.8m 10V Optimized for Synchronous Rectification Q Q V g tot gd gs(th) Low Conduction Losses 200nC 110nC 2.7V High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible S S Compatible with existing Surface Mount Techniques S S G D D S S Industrial Qualified S S DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline SB SC M2 M4 L4 L6 L8 Description TM The IRF7769L2TR/TR1PbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to 2 achieve the lowest on-state resistance in a package that has a footprint smaller than a D PAK and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems. The IRF7769L2TR/TR1PbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance power converters. Standard Pack Orderable part number Package Type Note Form Quantity IRF7769L2TRPbF DirectFET2 Large Can Tape and Reel 4000T suffix IRF7769L2TR1PbF DirectFET2 Large Can Tape and Reel 1000TR1 suffix EOL notice 264 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 100 V DS V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 124 D C GS 88 I T = 100C Continuous Drain Current, V 10V (Silicon Limited) A D C GS 20 I T = 25C Continuous Drain Current, V 10V (Silicon Limited) D A GS 375 I T = 25C Continuous Drain Current, V 10V (Package Limited) D C GS I Pulsed Drain Current 500 DM E Single Pulse Avalanche Energy 260 mJ AS I Avalanche Current 74 A AR 12.00 3.10 I = 74A T = 25C D A 10.00 V = 7.0V GS 8.00 3.00 V = 8.0V GS 6.00 T = 125C V = 10V J GS 4.00 2.90 V = 15V 2.00 GS T = 25C J 0.00 2.80 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 20 40 60 80 100 V , Gate-to-Source Voltage (V) GS I , Drain Current (A) D Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical On-Resistance vs. Drain Current Click on this section to link to the appropriate technical paper. T measured with thermocouple mounted to top (Drain) of part. C Click on this section to link to the DirectFET Website. Repetitive rating pulse width limited by max. junction temperature. Surface mounted on 1 in. square Cu board, steady state. Starting T = 25C, L = 0.09mH, R = 25, I = 74A. J G AS Typical R (on), (m) DS T ( ypical R m) DS(on) Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV V = 0V, I = 250 A Drain-to-Source Breakdown Voltage 100 V DSS GS D Reference to 25C, I = 2mA V /T Breakdown Voltage Temp. Coefficient 0.02 V/C D DSS J R V = 10V, I = 74A Static Drain-to-Source On-Resistance 2.8 3.5 m DS(on) GS D V = V , I = 250 A V Gate Threshold Voltage 2.0 2.7 4.0 V GS(th) DS GS D V /T Gate Threshold Voltage Coefficient -10 mV/C GS(th) J V = 100V, V = 0V I Drain-to-Source Leakage Current 20 A DS GS DSS V = 80V, V = 0V, T = 125C 250 DS GS J V = 20V I Gate-to-Source Forward Leakage 100 nA GS GSS V = -20V Gate-to-Source Reverse Leakage -100 GS V = 25V, I = 74A gfs Forward Transconductance 410 S DS D Q Total Gate Charge 200 300 g V = 50V Q Pre-Vth Gate-to-Source Charge 30 DS gs1 V = 10V Q Post-Vth Gate-to-Source Charge 9.0 nC GS gs2 I = 74A Q Gate-to-Drain Charge 110 165 D gd Q Gate Charge Overdrive 51 See Fig. 9 godr Q Switch Charge (Q + Q ) 119 sw gs2 gd V = 16V, V = 0V Q Output Charge 53 nC DS GS oss R Gate Resistance 1.5 G t V = 50V, V = 10V Turn-On Delay Time 44 DD GS d(on) t I = 74A Rise Time 32 r D t R =1.8 Turn-Off Delay Time 92 ns d(off) G t Fall Time 41 f C V = 0V Input Capacitance 11560 iss GS C V = 25V Output Capacitance 1240 pF oss DS C Reverse Transfer Capacitance 590 = 1.0MHz rss C V = 0V, V = 1.0V, f=1.0MHz Output Capacitance 6665 oss GS DS C V = 0V, V = 80V, f=1.0MHz Output Capacitance 690 oss GS DS Diode Characteristics Conditions Parameter Min. Typ. Max. Units I Continuous Source Current 124 MOSFET symbol S showing the (Body Diode) A I integral reverse Pulsed Source Current 500 SM p-n junction diode. (Body Diode) V T = 25C, I = 74A, V = 0V Diode Forward Voltage 1.3 V SD J S GS t T = 25C, I = 74A, V = 50V Reverse Recovery Time 75 112 ns J F DD rr Q di/dt = 100A/ s Reverse Recovery Charge 220 330 nC rr Repetitive rating pulse width limited by max. junction temperature. Pulse width 400s duty cycle 2%.