DirectFET Power MOSFET RoHS Compliant, Halogen Free Lead-Free (Qualified up to 260C Reflow) V V R DSS GS DS(on) Ideal for High Performance Isolated Converter 250V min 30V max 32m 10V Primary Switch Socket Q Q V Optimized for Synchronous Rectification g tot gd gs(th) Low Conduction Losses 110nC 39nC 4.0V High Cdv/dt Immunity Low Profile (<0.7mm) S S S S Dual Sided Cooling Compatible G D D S S Compatible with existing Surface Mount Techniques S S Industrial Qualified DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline SB SC M2 M4 L4 L6 L8 Description TM The IRF7799L2TR/TR1PbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the 2 lowest on-state resistance in a package that has a footprint smaller than a D PAK and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems. The IRF7799L2TR/TR1PbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance power converters. Standard Pack Orderable part number Package Type Note Form Quantity IRF7799L2TRPbF DirectFET2 Large Can Tape and Reel 4000T suffix IRF7799L2TR1PbF DirectFET2 Large Can Tape and Reel 1000TR1 suffix EOL notice 264 Absolute Maximum Ratings Max. Parameter Units V 250 DS Drain-to-Source Voltage V V Gate-to-Source Voltage 30 GS Continuous Drain Current, V 10V (Silicon Limited) 35 I T = 25C C GS D Continuous Drain Current, V 10V (Silicon Limited) 25 I T = 100C GS D C (Silicon Limited) I T = 25C Continuous Drain Current, V 10V 6.6 A GS D A Continuous Drain Current, V 10V (Package Limited) 375 I T = 25C C GS D I Pulsed Drain Current 140 DM E 325 Single Pulse Avalanche Energy mJ AS I 21 AR Avalanche Current A 200 60 I = 21A T = 25C D J 180 Vgs = 7.0V 55 Vgs = 8.0V 160 Vgs = 10V 50 Vgs = 15V 140 45 120 100 40 80 35 T = 125C J 60 30 40 T = 25C J 25 20 0 20 40 60 80 100 4 8 12 16 20 I , Drain Current (A) D V Gate -to -Source Voltage (V) GS, Fig 2. Typical On-Resistance vs. Drain Current Fig 1. Typical On-Resistance vs. Gate Voltage T measured with thermocouple mounted to top (Drain) of part. C Click on this section to link to the appropriate technical paper. Repetitive rating pulse width limited by max. junction temperature. Click on this section to link to the DirectFET Website. Starting T = 25C, L = 1.42mH, R = 25, I = 21A. J G AS Surface mounted on 1 in. square Cu board, steady state. Pulse width 400s duty cycle 2%. rain-to tance R , D -Source On Resis (m ) DS(on) Typical R (on) (mW) D S Static T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units BV V = 0V, I = 250 A Drain-to-Source Breakdown Voltage 250 V DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.12 V/C Reference to 25C, I = 2mA D DSS J R V = 10V, I = 21A Static Drain-to-Source On-Resistance 32 38 m DS(on) GS D V V = V , I = 250 A Gate Threshold Voltage 3.0 4.0 5.0 V GS(th) DS GS D V /T Gate Threshold Voltage Coefficient -13 mV/C GS(th) J I V = 250V, V = 0V Drain-to-Source Leakage Current 20 A DSS DS GS V = 250V, V = 0V, T = 125C 1 1mA DS GS J I V = 20V Gate-to-Source Forward Leakage 100 GSS GS nA V = -20V Gate-to-Source Reverse Leakage -100 GS V = 50V, I = 21A gfs Forward Transconductance 54 S DS D Q Total Gate Charge 110 165 g V = 125V Q Pre-Vth Gate-to-Source Charge 26 DS gs1 Q V = 10V Post-Vth Gate-to-Source Charge 5.7 GS gs2 nC I = 21A Q Gate-to-Drain Charge 39 D gd Q Gate Charge Overdrive 39 See Fig. 9 godr Q Switch Charge (Q + Q ) 45 sw gs2 gd Q V = 16V, V = 0V Output Charge 33 nC oss DS GS R Gate Resistance 0.73 G t V = 125V, V = 10V Turn-On Delay Time 36.3 d(on) DD GS t I = 21A Rise Time 33.5 r D ns t Turn-Off Delay Time 73.9 R =6.2 d(off) G t Fall Time 26.6 f V = 0V C Input Capacitance 6714 GS iss C V = 25V Output Capacitance 606 oss DS C Reverse Transfer Capacitance 157 pF = 1.0MHz rss C V = 0V, V = 1.0V, f=1.0MHz Output Capacitance 5063 oss GS DS V = 0V, V = 80V, f=1.0MHz C Output Capacitance 217 GS DS oss Diode Characteristics Parameter Min. Typ. Max. Units Conditions I MOSFET symbol Continuous Source Current S 35 (Body Diode) showing the A I integral reverse Pulsed Source Current SM 140 (Body Diode) p-n junction diode. V T = 25C, I = 21A, V = 0V Diode Forward Voltage 1.3 V SD J S GS T = 25C, I = 21A, V = 50V t Reverse Recovery Time 132 198 ns J F DD rr Q di/dt = 100A/ s Reverse Recovery Charge 1412 2118 nC rr