PD 91746E IRF7805 HEXFET Chip-Set for DC-DC Converters N Channel Application Specific MOSFETs A Ideal for Mobile DC-DC Converters 1 8 S D Low Conduction Losses 2 7 S D Low Switching Losses 3 6 S D Description 4 5 G D This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented SO-8 Top View balance of on-resistance and gate charge. The reduced conduction and switching losses make this device ideal for high efficiency DC-DC Converters that power the latest generation of mobile Device Features microprocessors. IRF7805 V 30V DS The IRF7805 offers maximum efficiency for mobile 11m R CPU core DC-DC converters. DS(on) Qg 31nC Qsw 11.5nC Qoss 36nC Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 30 V DS V Gate-to-Source Voltage 12 GS Continuous Drain Current, V 10V I T = 25C GS 13 D A Continuous Drain Current, V 10V I T = 70C 10 A A GS D Pulsed Drain Current I 100 DM Power Dissipation P T = 25C 2.5 W A D Power Dissipation P T = 70C 1.6 A D Linear Derating Factor 0.02 W/C T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units Junction-to-Drain Lead R 20 C/W JL Junction-to-Ambient R 50 JA www.irf.com 1 2/14/07 IRF7805 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Drain-to-Source Breakdown Voltage BV 30 V V = 0V, I = 250A DSS GS D Static Drain-to-Source On-Resistance R DS(on) 9.2 11 V = 4.5V, I = 7.0A m GS D Gate Threshold Voltage V GS(th) 1.0 3.0 V V = V , I = 250A DS GS D I DSS Drain-to-Source Leakage Current 70 V = 30V, V = 0V DS GS 10 A V = 24V, V = 0V DS GS 150 V = 24V, V = 0V, T = 100C DS GS J I Gate-to-Source Forward Leakage 100 V = 12V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -12V GS Total Gate Charge Q 22 31 V = 5.0V g GS Q gs1 Pre-Vth Gate-to-Source Charge 3.7 V = 16V DS Q gs2 Post-Vth Gate-to-Source Charge 1.4 nC I = 7.0A D Q gd Gate-to-Drain Charge 6.8 Q Switch Charge (Q + Q ) sw gs2 gd 8.2 11.5 Output Charge Q oss 3.0 3.6 nC V = 16V, V = 0V DS GS R Gate Resistance 0.5 1.7 G t Turn-On Delay Time 16 V = 16V, V = 4.5V d(on) DD GS t Rise Time 20 I = 7.0A r D ns t d(off) Turn-Off Delay Time 38 R = 2 G t f Fall Time 16 Resistive Load Diode Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current 2.5 MOSFET symbol (Body Diode) showing the A I SM Pulsed Source Current integral reverse 106 (Body Diode) p-n junction diode. Diode Forward Voltage V SD 1.2 V T = 25C, I = 7.0A, V = 0V J S GS Reverse Recovery Charge Q 88 di/dt = 700A/s rr ns V = 16V, V = 0V, I = 7.0A DS GS S Q Reverse Recovery Charge 55 di/dt = 700A/s (with 10BQ040) rr(s) nC (with Parallel Schottky) V = 16V, V = 0V, I = 7.0A DS GS S Notes: Repetitive rating pulse width limited by max. junction temperature. Pulse width 300 s duty cycle 2%. When mounted on 1 inch square copper board, t < 10 sec. Typ = measured - Q oss R is measured at T of approximately 90C. J Devices are 100% tested to these parameters. 2 www.irf.com