PD 96114C IRF7805QPbF Advanced Process Technology Ultra Low On-Resistance A N Channel MOSFET 1 8 S D Surface Mount 2 7 S D Available in Tape & Reel 150C Operating Temperature 3 6 S D Lead-Free 4 5 G D SO-8 Top View These HEXFET Power MOSFET s in package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power Device Features MOSFET s are a 150C junction operating IRF7805Q temperature, fast switching speed and improved V 30V DS repetitive avalanche rating. These benefits combine R to make this design an extremely efficient and reliable 11m DS(on) device for use in a wide variety of applications. Qg 31nC The efficient SO-8 package provides enhanced Qsw 11.5nC thermal characteristics making it ideal in a variety of Qoss 36nC power applications. This surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. Standard Pack Package EOL Base part number Orderable part number Replacement Part Number Type Notice Form Quantity IRF7805QTRPbF SO-8 Tape and Reel 4000 EOL 527 Please search the EOL part number on IRs website for IRF7805QPbF guidance IRF7805QPbF SO-8 Tube 95 EOL 529 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 30 V DS V Gate-to-Source Voltage 12 GS Continuous Drain Current, V 10V I T = 25C GS 13 A D Continuous Drain Current, V 10V I T = 70C 10 A A GS D Pulsed Drain Current I 100 DM Power Dissipation P T = 25C 2.5 W A D Power Dissipation P T = 70C 1.6 A D Linear Derating Factor 0.02 W/C T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units Junction-to-Drain Lead R JL 20 C/W Junction-to-Ambient R JA 50 www.irf.com 1 08/19/14 IRF7805QPbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Drain-to-Source Breakdown Voltage BV DSS 30 V V = 0V, I = 250A GS D Static Drain-to-Source On-Resistance R DS(on) 9.2 11 V = 4.5V, I = 7.0A m GS D Gate Threshold Voltage V GS(th) 1.0 3.0 V V = V , I = 250 A DS GS D I DSS Drain-to-Source Leakage Current 70 V = 30V, V = 0V DS GS 10 A V = 24V, V = 0V DS GS 150 V = 24V, V = 0V, T = 100C DS GS J I GSS Gate-to-Source Forward Leakage 100 V = 12V GS nA Gate-to-Source Reverse Leakage -100 V = -12V GS Q Total Gate Charge 22 31 V = 5.0V g GS Q Pre-Vth Gate-to-Source Charge 3.7 V = 16V gs1 DS Q Post-Vth Gate-to-Source Charge 1.4 I = 7.0A gs2 nC D Q gd Gate-to-Drain Charge 6.8 Q Switch Charge (Q + Q ) sw gs2 gd 8.2 11.5 Q oss Output Charge 3.0 3.6 nC V = 16V, V = 0V DS GS R Gate Resistance 0.5 1.7 G t d(on) Turn-On Delay Time 16 V = 16V, V = 4.5V DD GS t r Rise Time 20 I = 7.0A D ns t Turn-Off Delay Time 38 R = 2 d(off) G t Fall Time 16 Resistive Load f Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current 2.5 MOSFET symbol S (Body Diode) showing the A I SM Pulsed Source Current integral reverse 106 (Body Diode) p-n junction diode. Diode Forward Voltage V SD 1.2 V T = 25C, I = 7.0A, V = 0V J S GS Reverse Recovery Charge Q rr 88 di/dt = 700A/ s ns V = 16V, V = 0V, I = 7.0A DS GS S Q Reverse Recovery Charge 55 di/dt = 700A/ s (with 10BQ040) rr(s) nC (with Parallel Schottky) V = 16V, V = 0V, I = 7.0A DS GS S Notes: Repetitive rating pulse width limited by max. junction temperature. Pulse width 300 s duty cycle 2%. When mounted on 1 inch square copper board, t < 10 sec. Typ = measured - Q oss R is measured at T of approximately 90C. J Devices are 100% tested to these parameters. 2 www.irf.com