IRF7805PbF HEXFET Chip-Set for DC-DC Converters N Channel Application Specific MOSFETs A A 1 8 S D Ideal for Mobile DC-DC Converters 2 7 S D Low Conduction Losses 3 6 S D Low Switching Losses 4 5 G D Lead-Free SO-8 Top View IRF7805PbF Description Devices Features This new device employs advanced HEXFET Power IRF7805PbF MOSFET technology to achieve an unprecedented V balance of on-resistance and gate charge. The reduced DSS 30V conduction and switching losses make this device ideal R DS(on) 11m for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors. Qg 31nC Q SW 11.5nC The IRF7805PbF offers maximum efficiency for mobile CPU core DC-DC converters. Q OSS 36nC G D S Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRF7805PbF SO-8 Tape and Reel 4000 IRF7805PbF Symbol Parameter Max. Units V Drain-Source Voltage 30 DS V V Gate-to-Source Voltage 12 GS I T = 25C Continuous Drain Current, V 10V 13 D A GS A I T = 70C Continuous Drain Current, V 10V 10 D A GS I Pulsed Drain Current 100 DM P T = 25C Maximum Power Dissipation 2.5 D A W P T = 70C Maximum Power Dissipation 1.6 D A Linear Derating Factor 0.02 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Drain Lead 20 R JL C/W R Junction-to-Ambient 50 JA 1 2016-8-23 IRF7805PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A (BR)DSS GS D R Static Drain-to-Source On-Resistance 9.2 11 V = 4.5V, I = 7.0A m DS(on) GS D V Gate Threshold Voltage 1.0 3.0 V V = V , I = 250A GS(th) DS GS D 70 V = 30V, V = 0V DS GS I Drain-to-Source Leakage Current 10 A V = 24V, V = 0V DSS DS GS 150 V = 24V,V = 0V,T = 100C DS GS J Gate-to-Source Forward Leakage 100 V = 12V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -12V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 22 31 g Q Pre -Vth Gate-to-Source Charge 3.7 V = 5.0V gs1 GS nC Q Post-Vth Gate-to-Source Charge 1.4 V = 16V gs2 DS Q Gate-to-Drain Charge 6.8 I = 7.0A gd D Q Switch Charge (Qgs2 + Qgd) 8.2 11.5 sw Q Output Charge 30 36 nC V = 16V, V = 0V oss DS GS R Gate Resistance 0.5 1.7 G t Turn-On Delay Time 16 V = 16V,V = 4.5V d(on) DD GS t Rise Time 20 I = 7.0A r D ns t Turn-Off Delay Time 38 R = 2 d(off) G t Fall Time 16 Resistive Load f Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 2.5 S (Body Diode) showing the A Pulsed Source Current integral reverse I 106 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.2 V T = 25C,I = 7.0A,V = 0V SD J S GS di/dt = 700A/s Q Reverse Recovery Charge 88 rr V =16V, V = 0V, I = 7.0A DS GS S nC di/dt = 700A/s (with 10BQ040) Q Reverse Recovery Charge 55 rr V =16V, V = 0V, I = 7.0A DS GS S Notes: Repetitive rating pulse width limited by max. junction temperature. Pulse width 300s duty cycle 2%. When mounted on 1 in square copper board, t < 10 sec. Typ = measured - Q OSS R is measured at T of approximately 90C. J Devices are 100% tested to these parameters. 2 2016-8-23