PD 95290 IRF7807PbF IRF7807APbF HEXFET Chip-Set for DC-DC Converters N Channel Application Specific MOSFETs A Ideal for Mobile DC-DC Converters 1 8 S D Low Conduction Losses 2 7 S D Low Switching Losses Lead-Free 3 6 S D 4 5 G D Description These new devices employ advanced HEXFET SO-8 Top View Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC Device Features Converters that power the latest generation of mobile IRF7807 IRF7807A microprocessors. Vds 30V 30V Rds(on) 25m 25m A pair of IRF7807 devices provides the best cost/ Qg 17nC 17nC performance solution for system voltages, such as 3.3V Qsw 5.2nC and 5V. Qoss 16.8nC 16.8nC Absolute Maximum Ratings Parameter Symbol IRF7807 IRF7807A Units Drain-Source Voltage V 30 V DS Gate-Source Voltage V 12 GS Continuous Drain or Source 25C I 8.3 8.3 A D Current (V 4.5V) 70C 6.6 6.6 GS Pulsed Drain Current I 66 66 DM Power Dissipation 25C P 2.5 W D 70C 1.6 Junction & Storage Temperature Range T , T 55 to 150 C J STG Continuous Source Current (Body Diode) I 2.5 2.5 A S Pulsed source Current I 66 66 SM Thermal Resistance Parameter Max. Units Maximum Junction-to-Ambient R 50 C/W JA www.irf.com 1 09/22/04IRF7807/APbF Electrical Characteristics IRF7807 IRF7807A Parameter Min Typ Max Min Typ Max Units Conditions Drain-to-Source V 30 30 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage* Static Drain-Source R (on) 17 25 17 25 m V = 4.5V, I = 7A DS GS D on Resistance* Gate Threshold Voltage* V (th) 1.0 1.0 V V = V , I = 250A GS DS GS D Drain-Source Leakage I 30 30 A V = 24V, V = 0 DSS DS GS Current* 150 150 V = 24V, V = 0, DS GS Tj = 100C Gate-Source Leakage I 100 100 nA V = 12V GSS GS Current* Total Gate Charge* Q 12 17 12 17 V = 5V, I = 7A g GS D Pre-Vth Q 2.1 2.1 V = 16V, I = 7A gs1 DS D Gate-Source Charge Post-Vth Q 0.76 0.76 nC gs2 Gate-Source Charge Gate to Drain Charge Q 2.9 2.9 gd Switch Charge* Q 3.66 5.2 3.66 SW (Q + Q ) gs2 gd Output Charge* Q 14 16.8 14 16.8 V = 16V, V = 0 oss DS GS Gate Resistance R 1.2 1.2 g Turn-on Delay Time t (on) 12 12 V = 16V d DD Rise Time t 17 17 ns I = 7A r D Turn-off Delay Time t (off) 25 25 R = 2 d g Fall Time t 66 V = 4.5V f GS Resistive Load Source-Drain Rating & Characteristics Parameter Min Typ Max Min Typ Max Units Conditions Diode Forward V 1.2 1.2 V I = 7A , V = 0V SD S GS Voltage* Reverse Recovery Q 80 80 nC di/dt = 700A/s rr Charge V = 16V, V = 0V, I = 7A DS GS S di/dt = 700A/s Reverse Recovery Q 50 50 rr(s) (with 10BQ040) Charge (with Parallel V = 16V, V = 0V, I = 7A Schotkky) DS GS S Notes: Repetitive rating pulse width limited by max. junction temperature. Pulse width 300 s duty cycle 2%. When mounted on 1 inch square copper board, t < 10 sec. Typ = measured - Q oss * Devices are 100% tested to these parameters. 2 www.irf.com