PD-95265 IRF7811AVPbF IRF7811AVPbF N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses A Low Switching Losses A 1 8 S D Minimizes Parallel MOSFETs for high current applications 2 7 S D 100% R Tested G 3 6 Lead-Free S D 4 5 G D Description This new device employs advanced HEXFET Power Top View MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. DEVICE CHARACTERISTICS The IRF7811AV has been optimized for all parameters IRF7811AV that are critical in synchronous buck converters including R , gate charge and Cdv/dt-induced turn-on immunity. 11 m R DS(on) DS(on) The IRF7811AV offers an extremely low combination of Q 17 nC G Q & R for reduced losses in both control and sw DS(on) Q 6.7 nC synchronous FET applications. SW Q 8.1 nC OSS The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application. Absolute Maximum Ratings Parameter Symbol IRF7811AV Units V Drain-to-Source Voltage DS 30 V V Gate-to-Source Voltage 20 GS T = 25C Continuous Output Current A 10.8 A I D (V 4.5V) T = 90C GS L 11.8 Pulsed Drain Current I 100 DM T = 25C A 2.5 Power Dissipation P W D T = 90C L 3.0 T , T -55 to 150 C Junction & Storage Temperature Range J STG Continuous Source Current (Body Diode) I 2.5 S A Pulsed Source Current I 50 SM Thermal Resistance Parameter Symbol Typ Max Units R Maximum Junction-to-Ambient JA 50 C/W Maximum Junction-to-Lead R 20 JL www.irf.com 1 08/17/04 IRF7811AVPbF Electrical Characteristics Parameter Symbol Min Typ Max Units Conditions Drain-to-Source Breakdown Voltage V 30 V V = 0V, I = 250A (BR)DSS GS D Static Drain-to-Source On-Resistance R 11 14 V = 4.5V, I = 15A m DS(on) GS D Gate Threshold Voltage V 1.0 3.0 V V = V , I = 250A GS(th) DS GS D 50 A V = 30V, V = 0V DS GS I Drain-to-Source Leakage Current DSS 20 A V = 24V, V = 0V DS GS 100 mA V = 24V, V = 0V, T = 100C DS GS J Gate-to-Source Leakage Current I 100 nA V = 20V GSS GS Total Gate Charge, Control FET Q 17 26 nC V = 24V, I = 15A, V = 5.0V g DS D GS Q V = 5.0V, V < 100mV Total Gate Charge, Synch FET 14 21 g GS DS Pre-Vth Gate-to-Source Charge Q 3.4 gs1 Post-Vth Gate-to-Source Charge Q 1.6 gs2 V = 16V, I = 15A DS D Gate-to-Drain Mille) Charge Q 5.1 gd Switch Charge (Q + Q)Q 6.7 gs2 gd SW Output Charge Q 8.1 12 V = 16V, V = 0 OSS DS GS Gate Resistance R 0.5 4.4 G t Turn-On Delay Time 8.6 ns V = 16V d(on) DD Rise Time t 21 I = 15A r D Turn-Off Delay Time t 43 V = 5.0V d(off) GS Fall Time t 10 Clamped Inductive Load f C Input Capacitance 1801 pF V = 0V iss GS Output Capacitance C 723 V = 10V oss DS Reverse Transfer Capacitance C 46 rss Diode Characteristics Parameter Symbol Min Typ Max Units Conditions T = 25C, I = 15A ,V = 0V Diode Forward Voltage V J S GS SD 1.3 V di/dt = 700A/s Q Reverse Recovery Charge 50 nC rr V = 16V, V = 0V, I = 15A DD GS D Reverse Recovery Charge di/dt = 700A/s , (with 10BQ040) Q 43 nC rr (with Parallel Schottsky) V = 16V, V = 0V, I = 15A DD GS D Notes: Repetitive rating pulse width limited by max. junction temperature. Pulse width 400 s duty cycle 2%. When mounted on 1 inch square copper board, t < 10 sec. Typ = measured - Q oss Typical values of R (on) measured at V = 4.5V, Q , Q and Q measured at V =5.0V, I = 15A. DS GS G SW OSS GS F 2 www.irf.com