PD-94031D IRF7811W HEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses A 1 Low Switching Losses 8 D S 100% Tested for R G 2 7 S D 3 6 S D Description 4 5 G D This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced SO-8 Top View conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. DEVICE CHARACTERISTICS The IRF7811W has been optimized for all parameters IRF7811W that are critical in synchronous buck converters including R 9.0m R , gate charge and Cdv/dt-induced turn-on immunity. DS(on) DS(on) The IRF7811W offers particulary low R and high Cdv/ DS(on) Q 22nC G dt immunity for synchronous FET applications. Q 10.1nC sw The package is designed for vapor phase, infra-red, Q 12nC oss convection, or wave soldering techniques. Power dissipation of greater than 3W is possible in a typical PCB mount application. Absolute Maximum Ratings Parameter Symbol IRF7811W Units Drain-Source Voltage V 30 V DS Gate-Source Voltage V 12 GS Continuous Drain or Source T = 25C I 14 A D Current (V 4.5V) T = 90C 13 A GS L Pulsed Drain Current I 109 DM Power Dissipation T = 25C P 3.1 W A D T = 90C 3.0 L Junction & Storage Temperature Range T ,T 55 to 150 C J STG Continuous Source Current (Body Diode) I 3.8 A S Pulsed Source Current I 109 SM Thermal Resistance Parameter Max. Units Maximum Junction-to-Ambient R 40 C/W JA Maximum Junction-to-Lead R 20 C/W JL www.irf.com 1 01/06/09IRF7811W Electrical Characteristics Parameter Min Typ Max Units Conditions Drain-to-Source BV 30 V V = 0V, I = 250A DSS GS D Breakdown Voltage Static Drain-Source R 9.0 12 m V = 4.5V, I = 15A DS GS D (on) on Resistance Gate Threshold Voltage V 1.0 V V = V ,I = 250A GS(th) DS GS D Drain-Source Leakage I 30 V = 24V, V = 0 DSS DS GS Current 150 A V = 24V, V = 0, DS GS Tj = 100C Gate-Source Leakage I 100 nA V = 12V GSS GS Current Total Gate Chg Cont FET Q 22 33 V =5.0V, I =15A, V =16V G GS D DS Total Gate Chg Sync FET Q 16.3 V = 5V, V < 100mV G GS DS Pre-Vth Q 3.5 V = 16V, I = 15A, V = 5.0V GS1 DS D GS Gate-Source Charge Post-Vth Q 1.2 nC GS2 Gate-Source Charge Gate to Drain Charge Q 8.8 GD Switch Chg(Q + Q ) Q 10.1 gs2 gd sw Output Charge Q 12 V = 16V, V = 0 oss DS GS Gate Resistance R 2.0 4.0 G Turn-on Delay Time t 11 V = 16V, I = 15A d (on) DD D Rise Time t 11 ns V = 5.0V r GS Turn-off Delay Time t 29 Clamped Inductive Load d (off) Fall Time t 9.9 f Input Capacitance C 2335 iss Output Capacitance C 400 pF V = 16V, V = 0 oss DS GS Reverse Transfer Capacitance C 119 rss Source-Drain Rating & Characteristics Parameter Min Typ Max Units Conditions Diode Forward V 1.25 V I = 15A , V = 0V SD S GS Voltage* Reverse Recovery Q 45 nC di/dt ~ 700A/s rr Charge V = 16V, V = 0V, I = 15A DS GS S Reverse Recovery Q 41 nC di/dt = 700A/s rr(s) Charge (with Parallel (with 10BQ040) Schottky) V = 16V, V = 0V, I = 15A DS GS S Notes: Repetitive rating pulse width limited by max. junction temperature. Pulse width 400 s duty cycle 2%. When mounted on 1 inch square copper board Typ = measured - Q oss Typical values of R (on) measured at V = 4.5V, Q , Q and Q DS GS G SW OSS measured at V = 5.0V, I = 15A. GS F www.irf.com 2