PD - 94279 IRF7822 HEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses A 1 Low Switching Losses 8 D S 2 7 S D Description 3 6 S D This new device employs advanced HEXFET Power 4 5 G D MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high SO-8 Top View efficiency DC-DC converters that power the latest generation of microprocessors. DEVICE CHARACTERISTICS The IRF7822 has been optimized for all parameters that are critical in synchronous buck converters including IRF7822 R , gate charge and Cdv/dt-induced turn-on immunity. DS(on) The IRF7822 offers particulary low R and high Cdv/ R 5.0m DS(on) DS(on) dt immunity for synchronous FET applications. Q 44nC G The package is designed for vapor phase, infra-red, Q 12nC sw convection, or wave soldering techniques. Power Q 27nC oss dissipation of greater than 3W is possible in a typical PCB mount application. Absolute Maximum Ratings Parameter Symbol IRF7822 Units Drain-Source Voltage V 30 V DS Gate-Source Voltage V 12 GS Continuous Drain or Source T = 25C I 18 A D Current (V 4.5V) T = 70C 13 A GS A Pulsed Drain Current I 150 DM Power Dissipation T = 25CP 3.1 W A D T = 70C 3.0 A Junction & Storage Temperature Range T ,T 55 to 150 C J STG Continuous Source Current (Body Diode) I 3.8 A S Pulsed Source Current I 150 SM Thermal Resistance Parameter Max. Units Maximum Junction-to-Ambient R 40 C/W JA Maximum Junction-to-Lead R 20 C/W JL www.irf.com 1 07/11/01IRF7822 Electrical Characteristics Parameter Min Typ Max Units Conditions Drain-to-Source BV 30 VV = 0V, I = 250A DSS GS D Breakdown Voltage Static Drain-Source R 5.0 6.5 m V = 4.5V, I = 15A DS GS D (on) on Resistance Gate Threshold Voltage V 1.0 V V = V ,I = 250A GS(th) DS GS D Drain-Source Leakage I 30 V = 24V, V = 0 DSS DS GS Current Current* 150 A V = 24V, V = 0, DS GS Tj = 100C Gate-Source Leakage I 100 nA V = 12V GSS GS Current Total Gate Chg Cont FET Q 44 60 V =5.0V, I =15A, V =16V G GS D DS Total Gate Chg Sync FET Q 38 V = 5.0V, V < 100mV G GS DS Pre-Vth Q 13 V = 16V, I = 15A GS1 DS D Gate-Source Charge Post-Vth Q 3.0 nC GS2 Gate-Source Charge Gate to Drain Charge Q 9.0 GD Switch Chg(Q + Q ) Q 12 gs2 gd sw Output Charge Q 27 V = 16V, V = 0 oss DS GS Gate Resistance R 1.5 G Turn-on Delay Time t 15 V = 16V, I = 15A d (on) DD D Rise Time t 5.5 ns V = 5.0V r GS Turn-off Delay Time t 22 Clamped Inductive Load d (off) Fall Time t 12 f Input Capacitance C 5500 iss Output Capacitance C 1000 pF V = 16V, V = 0 oss DS GS Reverse Transfer Capacitance C 300 rss Source-Drain Rating & Characteristics Parameter Min Typ Max Units Conditions Diode Forward V 1.0 V I = 15A , V = 0V SD S GS Voltage* Reverse Recovery Q 120 nC di/dt ~ 700A/s rr Charge V = 16V, V = 0V, I = 15A DS GS S Reverse Recovery Q 108 nC di/dt = 700A/s rr(s) Charge (with Parallel (with 10BQ040) Schottky) V = 16V, V = 0V, I = 15A DS GS S Notes: Repetitive rating pulse width limited by max. junction temperature. Pulse width 400 s duty cycle 2%. When mounted on 1 inch square copper board Typ = measured - Q oss Typical values of R (on) measured at V = 4.5V, Q , Q and Q DS GS G SW OSS measured at V = 5.0V, I = 15A. GS F 2 www.irf.com