IRF7831PbF
HEXFET Power MOSFET
Applications
V R max
Qg (typ.)
DSS DS(on)
High Frequency Point-of-Load
3.6m@V = 10V
30V 40nC
GS
Synchronous Buck Converter for
Applications in Networking &
Computing Systems.
A
A
1 8
S D
Benefits
2 7
S D
Very Low R at 4.5V V
DS(on) GS
3 6
S D
Ultra-Low Gate Impedance
4 5
G D
Fully Characterized Avalanche Voltage
and Current SO-8
Top View
100% Tested for R
G
Lead-Free
Absolute Maximum Ratings
Parameter Max. Units
V
DS Drain-to-Source Voltage 30 V
V
Gate-to-Source Voltage 12
GS
@ T = 25C Continuous Drain Current, V @ 10V
I GS 21
D A
Continuous Drain Current, V @ 10V
I @ T = 70C 17 A
D A GS
Pulsed Drain Current
I 170
DM
Power Dissipation
P @T = 25C 2.5 W
A
D
Power Dissipation
P @T = 70C 1.6
A
D
Linear Derating Factor 0.02 W/C
T Operating Junction and -55 to + 150 C
J
T Storage Temperature Range
STG
Thermal Resistance
Parameter Typ. Max. Units
R
Junction-to-Drain Lead 20 C/W
JL
Junction-to-Ambient
R
50
JA
Notesthrough are on page 10
www.irf.com 1
6/30/05
Static @ T = 25C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A
DSS GS D
V /T Breakdown Voltage Temp. Coefficient 0.025 V/C Reference to 25C, I = 1mA
DSS J D
R Static Drain-to-Source On-Resistance 2.5 3.1 3.6 m V = 10V, I = 20A
DS(on) GS D
3.0 3.7 4.4 V = 4.5V, I = 16A
GS D
V Gate Threshold Voltage 1.35 2.35 V V = V , I = 250A
GS(th) DS GS D
V Gate Threshold Voltage Coefficient - 5.7 mV/C
GS(th)
I Drain-to-Source Leakage Current 1.0 A V = 24V, V = 0V
DSS DS GS
150 V = 24V, V = 0V, T = 125C
DS GS J
I Gate-to-Source Forward Leakage 100 nA V = 12V
GSS GS
Gate-to-Source Reverse Leakage -100 V = -12V
GS
gfs Forward Transconductance 97 S V = 15V, I = 16A
DS D
Q Total Gate Charge 40 60
g
Q Pre-Vth Gate-to-Source Charge 12 V = 15V
gs1 DS
Q Post-Vth Gate-to-Source Charge 3.1 nC V = 4.5V
gs2 GS
Q Gate-to-Drain Charge 11 I = 16A
gd D
Q Gate Charge Overdrive 14 See Fig. 16
godr
Q Switch Charge (Q + Q ) 14
sw gs2 gd
Q Output Charge 22 nC V = 16V, V = 0V
oss DS GS
R Gate Resistance 1.4 2.5
G
t Turn-On Delay Time 18 V = 15V, V = 4.5V
d(on) DD GS
t Rise Time 10 I = 16A
r D
t Turn-Off Delay Time 17 ns Clamped Inductive Load
d(off)
t Fall Time 5.3
f
C Input Capacitance 6240 V = 0V
iss GS
C Output Capacitance 980 pF V = 15V
oss DS
C Reverse Transfer Capacitance 390 = 1.0MHz
rss
Avalanche Characteristics
Parameter Typ. Max. Units
Single Pulse Avalanche Energy
E 100 mJ
AS
Avalanche Current
I 16 A
AR
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I Continuous Source Current 2.5 MOSFET symbol
S
(Body Diode) A showing the
I Pulsed Source Current 170 integral reverse
SM
(Body Diode) p-n junction diode.
V Diode Forward Voltage 1.2 V T = 25C, I = 16A, V = 0V
SD
J S GS
t Reverse Recovery Time 42 62 ns T = 25C, I = 16A, V = 25V
rr
J F DD
Q Reverse Recovery Charge 31 47 nC di/dt = 100A/s
rr
t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L )
on S D
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