IRF7834PbF HEXFET Power MOSFET Applications Synchronous MOSFET for Notebook V R max Qg (typ.) DSS DS(on) Processor Power 4.5m V = 10V 30V 29nC GS Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Lead-Free A A 1 8 S D 2 7 S D Benefits 3 6 S D Very Low R at 4.5V V DS(on) GS 4 5 G D Ultra-Low Gate Impedance SO-8 Fully Characterized Avalanche Voltage Top View and Current 20V V Max. Gate Rating GS Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 30 V DS V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V GS 19 D A I T = 70C Continuous Drain Current, V 10V GS 16 A D A Pulsed Drain Current I 160 DM Power Dissipation P T = 25C 2.5 W D A Power Dissipation P T = 70C 1.6 D A Linear Derating Factor 0.02 W/C T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units Junction-to-Drain Lead R JL 20 C/W Junction-to-Ambient R JA 50 Notes through are on page 10 www.irf.com 1 9/21/04 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A GS D V /T DSS J Breakdown Voltage Temp. Coefficient 0.023 V/C Reference to 25C, I = 1mA D R DS(on) Static Drain-to-Source On-Resistance 3.6 4.5 m V = 10V, I = 19A GS D 4.4 5.5 V = 4.5V, I = 16A GS D V GS(th) Gate Threshold Voltage 1.35 2.25 V V = V , I = 250A DS GS D V GS(th) Gate Threshold Voltage Coefficient - 5.2 mV/C I DSS Drain-to-Source Leakage Current 1.0 A V = 24V, V = 0V DS GS 150 V = 24V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 100 nA V = 20V GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 85 S V = 15V, I = 16A DS D Q g Total Gate Charge 29 44 Q gs1 Pre-Vth Gate-to-Source Charge 7.5 V = 15V DS Q gs2 Post-Vth Gate-to-Source Charge 2.7 nC V = 4.5V GS Q gd Gate-to-Drain Charge 9.8 I = 16A D Q Gate Charge Overdrive 9.0 See Fig. 16 godr Q Switch Charge (Q + Q ) 12.5 sw gs2 gd Q Output Charge 19 nC V = 16V, V = 0V oss DS GS t d(on) Turn-On Delay Time 13.7 V = 15V, V = 4.5V DD GS t r Rise Time 14.3 I = 16A D t d(off) Turn-Off Delay Time 18 ns Clamped Inductive Load t Fall Time 5.0 f C Input Capacitance 3710 V = 0V iss GS C Output Capacitance 810 pF V = 15V oss DS C rss Reverse Transfer Capacitance 350 = 1.0MHz Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E AS 25 mJ Avalanche Current I 16 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current 3.1 MOSFET symbol (Body Diode) A showing the I Pulsed Source Current 160 integral reverse SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 16A, V = 0V SD J S GS t rr Reverse Recovery Time 21 32 ns T = 25C, I = 16A, V = 15V DD J F Q di/dt = 100A/s rr Reverse Recovery Charge 13 20 nC 2 www.irf.com