HEXFET Power MOSFET Applications Synchronous MOSFET for Notebook V R max Qg (typ.) DSS DS(on) Processor Power Secondary Synchronous Rectification 5.0m V = 10V 40V 33nC GS for Isolated DC-DC Converters Synchronous Fet for Non-Isolated A DC-DC Converters A 1 8 S D Lead-Free 2 7 S D Benefits 3 6 S D Very Low R at 4.5V V DS(on) GS 4 5 G D Low Gate Charge Fully Characterized Avalanche Voltage SO-8 Top View and Current Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity Tube/Bulk 95 IRF7842PbF IRF7842PbF SO-8 Tape and Reel 4000 IRF7842TRPbF Absolute Maximum Ratings Parameter Max. Units V DS Drain-to-Source Voltage 40 V V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V I T = 25C GS 18 A D Continuous Drain Current, V 10V I T = 70C 14 A A GS D Pulsed Drain Current I 140 DM Power Dissipation P T = 25C 2.5 W A D Power Dissipation P T = 70C 1.6 D A Linear Derating Factor 0.02 W/C T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units Junction-to-Drain Lead R 20 C/W JL Junction-to-Ambient R 50 JA Notes through are on page 10 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.037 V/C Reference to 25C, I = 1mA DSS J D m R Static Drain-to-Source On-Resistance 4.0 5.0 V = 10V, I = 17A DS(on) GS D 4.7 5.9 V = 4.5V, I = 14A GS D V Gate Threshold Voltage 1.35 2.25 V V = V , I = 250A GS(th) DS GS D V Gate Threshold Voltage Coefficient - 5.6 mV/C GS(th) I Drain-to-Source Leakage Current 1.0 A V = 32V, V = 0V DSS DS GS 150 V = 32V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 81 S V = 20V, I = 14A DS D Q Total Gate Charge 33 50 g Q Pre-Vth Gate-to-Source Charge 9.6 V = 20V gs1 DS Q Post-Vth Gate-to-Source Charge 2.8 nC V = 4.5V gs2 GS Q Gate-to-Drain Charge 10 I = 14A gd D Q Gate Charge Overdrive 10.6 godr Q Switch Charge (Q + Q ) 12.8 sw gs2 gd Q Output Charge 18 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.3 2.6 G t Turn-On Delay Time 14 V = 20V, V = 4.5V d(on) DD GS t Rise Time 12 I = 14A r D t Turn-Off Delay Time 21 ns Clamped Inductive Load d(off) t Fall Time 5.0 f C Input Capacitance 4500 V = 0V iss GS C Output Capacitance 680 pF V = 20V oss DS C Reverse Transfer Capacitance 310 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy 50 mJ E AS Avalanche Current I 14 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current 3.1 MOSFET symbol S (Body Diode) A showing the I Pulsed Source Current 140 integral reverse SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 14A, V = 0V SD J S GS t Reverse Recovery Time 99 150 ns T = 25C, I = 14A, V = 20V rr J F DD Q Reverse Recovery Charge 11 17 nC di/dt = 100A/s rr