IRF7904PbF HEXFET Power MOSFET Applications V R max I Dual SO-8 MOSFET for POL DSS D DS(on) Converters in Notebook Computers, Servers, 30V Q1 16.2m V = 10V 7.6A GS Graphics Cards, Game Consoles and Set-Top Box V = 10V 11A Q2 10.8m GS Benefits Very Low R at 4.5V V DS(on) GS Low Gate Charge Fully Characterized Avalanche Voltage and Current 20V V Max. Gate Rating GS Improved Body Diode Reverse Recovery SO-8 100% Tested for R G Lead-Free Absolute Maximum Ratings Parameter Q1 Max. Q2 Max. Units V Drain-to-Source Voltage 30 V DS V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 7.6 11 D A GS I T = 70C Continuous Drain Current, V 10V 6.1 8.9 A D A GS Pulsed Drain Current I 61 89 DM P T = 25C Power Dissipation 1.4 2.0 W D A P T = 70C Power Dissipation 0.9 1.3 D A Linear Derating Factor 0.011 0.016 W/C T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Thermal Resistance Parameter Q1 Max. Q2 Max. Units Junction-to-Drain Lead R 20 20 C/W JL R Junction-to-Ambient 90 62.5 JA www.irf.com 1 07/10/06 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage Q1&Q2 30 V V = 0V, I = 250A DSS GS D Reference to 25C, I = 1mA V /T Breakdown Voltage Temp. Coefficient Q1 0.024 V/C D DSS J Q2 0.024 V = 10V, I = 7.6A Q1 11.4 16.2 GS D R V = 4.5V, I = 6.1A Static Drain-to-Source On-Resistance 14.5 20.5 m GS D DS(on) V = 10V, I = 11A Q2 8.6 10.8 GS D V = 4.5V, I = 8.8A 10 13 GS D V Q1: V = V , I = 25A Gate Threshold Voltage Q1&Q2 1.35 2.25 V DS GS D GS(th) Q2: V = V , I = 50A V /T Gate Threshold Voltage Coefficient Q1 -5.0 mV/C DS GS D GS(th) J Q2 -5.0 V = 24V, V = 0V I Drain-to-Source Leakage Current Q1&Q2 1.0 A DS GS DSS V = 24V, V = 0V, T = 125C Q1&Q2 150 DS GS J V = 20V I Gate-to-Source Forward Leakage Q1&Q2 100 nA GS GSS V = -20V Gate-to-Source Reverse Leakage Q1&Q2 -100 GS V = 15V, I = 6.1A gfs Forward Transconductance Q1 17 S DS D V = 15V, I = 8.8A Q2 23 DS D Q Total Gate Charge Q1 7.5 11 g Q2 14 21 Q Pre-Vth Gate-to-Source Charge Q1 2.2 Q1 gs1 Q2 3.7 V = 15V DS Q Post-Vth Gate-to-Source Charge Q1 0.6 nC V = 4.5V, I = 6.1A gs2 GS D Q2 1.1 Q Gate-to-Drain Charge Q1 2.5 Q2 gd Q2 4.8 V = 15V DS Q Gate Charge Overdrive Q1 2.2 V = 4.5V, I = 8.8A godr GS D Q2 4.4 Q Switch Charge (Q + Q ) Q1 3.1 sw gs2 gd Q2 5.9 V = 16V, V = 0V Q Output Charge Q1 4.5 nC DS GS oss Q2 9.1 Gate Resistance 3.2 4.8 R Q1 G Q2 2.9 4.4 t Turn-On Delay Time Q1 6.9 Q1 d(on) V = 15V, V = 4.5V Q2 7.8 DD GS t Rise Time Q1 7.3 I = 6.1A r D Q2 10 ns t Turn-Off Delay Time Q1 10 Q2 d(off) V = 15V, V = 4.5V Q2 15 DD GS t Fall Time Q1 3.2 I = 8.8A f D Q2 4.6 Clamped Inductive Load C Input Capacitance Q1 910 iss V = 0V Q2 1780 GS V = 15V C Output Capacitance Q1 190 pF DS oss Q2 390 = 1.0MHz C Reverse Transfer Capacitance Q1 94 rss Q2 180 Avalanche Characteristics Parameter Typ. Q1 Max. Q2 Max. Units E Single Pulse Avalanche Energy 140 250 mJ AS I Avalanche Current 6.1 8.8 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current Q1 1.8 A MOSFET symbol S (Body Diode) Q2 2.5 showing the I Pulsed Source Current Q1 61 A integral reverse SM (Body Diode) Q2 88 p-n junction diode. T = 25C, I = 6.1A, V = 0V V Diode Forward Voltage Q1 1.0 V J S GS SD T = 25C, I = 8.8A, V = 0V Q2 1.0 J S GS Q1 T = 25C, I = 6.1A, t Reverse Recovery Time Q1 11 17 ns J F rr V = 15V, di/dt = 100A/s Q2 16 24 DD Q2 T = 25C, I = 8.8A, Q Reverse Recovery Charge Q1 2.6 3.9 nC J F rr V = 15V, di/dt = 100A/s Q2 6.9 10 DD 2 www.irf.com