IRF8721GPbF Applications HEXFET Power MOSFET Control MOSFET of Sync-Buck V R max Qg DSS DS(on) Converters used for Notebook Processor Power 8.5m V = 10V 30V 8.3nC GS Control MOSFET for Isolated DC-DC Converters in Networking Systems A Benefits A 1 8 S D Very Low Gate Charge 2 7 S D Low R at 4.5V V DS(on) GS 3 6 Low Gate Impedance S D 4 5 Fully Characterized Avalanche Voltage G D and Current SO-8 Top View 20V V Max. Gate Rating GS Lead-Free Halogen-Free Description The IRF8721GPbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package The IRF8721GPbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for Notebook and Netcom applications. Absolute Maximum Ratings Parameter Max. Units V DS Drain-to-Source Voltage 30 V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 14 A GS D T = 70C Continuous Drain Current, V 10V I GS 11 A D A Pulsed Drain Current I 110 DM P T = 25C Power Dissipation 2.5 D A W P T = 70C Power Dissipation 1.6 D A Linear Derating Factor 0.02 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units Junction-to-Drain Lead R JL 20 C/W Junction-to-Ambient R JA 50 Notes through are on page 9 www.irf.com 1 07/10/09 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.021 V/C Reference to 25C, I = 1mA DSS J D R Static Drain-to-Source On-Resistance 6.9 8.5 m V = 10V, I = 14A DS(on) GS D 10.6 12.5 V = 4.5V, I = 11A GS D V Gate Threshold Voltage 1.35 2.35 V V = V , I = 25A GS(th) DS GS D V Gate Threshold Voltage Coefficient -6.2 mV/C GS(th) I Drain-to-Source Leakage Current 1.0 A V = 24V, V = 0V DSS DS GS 150 V = 24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 27 S V = 15V, I = 11A DS D Q Total Gate Charge 8.3 12 g Q Pre-Vth Gate-to-Source Charge 2.0 V = 15V gs1 DS Q Post-Vth Gate-to-Source Charge 1.0 nC V = 4.5V gs2 GS Q Gate-to-Drain Charge 3.2 I = 11A gd D Q Gate Charge Overdrive 2.0 See Fig. 16a and 16b godr Q Switch Charge (Q + Q ) 4.2 sw gs2 gd Q Output Charge 5.0 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.8 G 3.0 t Turn-On Delay Time 8.2 V = 15V, V = 4.5V d(on) DD GS t Rise Time 11 I = 11A r D t Turn-Off Delay Time 8.1 ns R = 1.8 d(off) G t Fall Time 7.0 See Fig. 15a f C Input Capacitance 1040 V = 0V iss GS C Output Capacitance 229 pF V = 15V oss DS C Reverse Transfer Capacitance 114 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 68 mJ AS Avalanche Current I 11 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current 3.1 MOSFET symbol S (Body Diode) A showing the G I Pulsed Source Current 112 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 11A, V = 0V SD J S GS t rr Reverse Recovery Time 14 21 ns T = 25C, I = 11A, V = 15V DD J F Q Reverse Recovery Charge 15 23 nC di/dt = 300A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com