IRF8910PbF HEXFET Power MOSFET Applications V R max I DSS DS(on) D Dual SO-8 MOSFET for POL converters in desktop, servers, 13.4m V = 10V 20V 10A GS graphics cards, game consoles and set-top box Lead-Free 1 8 S1 D1 Benefits 2 7 G1 D1 Very Low R at 4.5V V DS(on) GS 3 6 S2 D2 Ultra-Low Gate Impedance 4 5 G2 D2 Fully Characterized Avalanche Voltage and Current SO-8 Top View 20V V Max. Gate Rating GS Absolute Maximum Ratings Parameter Max. Units V DS Drain-to-Source Voltage 20 V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V GS 10 D A Continuous Drain Current, V 10V I T = 70C GS 8.3 A A D Pulsed Drain Current I 82 DM P T = 25C Power Dissipation 2.0 W D A P T = 70C Power Dissipation 1.3 A D Linear Derating Factor 0.016 W/C T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units R JL Junction-to-Drain Lead 42 C/W R JA 62.5 Junction-to-Ambient Notes through are on page 10 www.irf.com 1 07/09/08 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 20 V V = 0V, I = 250A GS D V /T DSS J Breakdown Voltage Temp. Coefficient 0.015 V/C Reference to 25C, I = 1mA D R DS(on) Static Drain-to-Source On-Resistance 10.7 13.4 V = 10V, I = 10A m GS D 14.6 18.3 V = 4.5V, I = 8.0A GS D V Gate Threshold Voltage 1.65 2.55 V V = V , I = 250A GS(th) DS GS D V /T Gate Threshold Voltage Coefficient -4.8 mV/C GS(th) J I Drain-to-Source Leakage Current 1.0 A V = 16V, V = 0V DSS DS GS 150 V = 16V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 100 nA V = 20V GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 24 S V = 10V, I = 8.2A DS D Q g Total Gate Charge 7.4 11 Q gs1 Pre-Vth Gate-to-Source Charge 2.4 V = 10V DS Q gs2 Post-Vth Gate-to-Source Charge 0.80 nC V = 4.5V GS Q Gate-to-Drain Charge 2.5 I = 8.2A gd D Q Gate Charge Overdrive 1.7 See Fig. 6 godr Q Switch Charge (Q + Q ) 3.3 sw gs2 gd Q oss Output Charge 4.4 nC V = 10V, V = 0V DS GS t d(on) Turn-On Delay Time 6.2 V = 10V, V = 4.5V DD GS t r Rise Time 10 ns I = 8.2A D t d(off) Turn-Off Delay Time 9.7 Clamped Inductive Load t f Fall Time 4.1 C Input Capacitance 960 V = 0V iss GS C Output Capacitance 300 pF V = 10V oss DS C Reverse Transfer Capacitance 160 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E AS 19 mJ Avalanche Current I AR 8.2 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions I D S Continuous Source Current 2.5 MOSFET symbol (Body Diode) A showing the G I Pulsed Source Current 82 integral reverse SM S (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.0 V T = 25C, I = 8.2A, V = 0V J S GS t rr Reverse Recovery Time 17 26 ns T = 25C, I = 8.2A, V = 10V J F DD Q di/dt = 100A/s rr Reverse Recovery Charge 6.5 9.7 nC 2 www.irf.com