IRF9317PbF HEXFET Power MOSFET V -30 V DS S18 D R DS(on) max 6.6 m S27 D ( V = -10V) GS R S 3 6 D DS(on) max 10.2 m ( V = -4.5V) GS G 4 5 D Q 31 nC g (typical) SO-8 I D -16 A ( T = 25C) A Applications Features and Benefits Resulting Benefits Features Industry-Standard SO8 Package Multi-Vendor Compatibility RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier Orderable part number Package Type Standard Pack Note Form Quantity IRF9317PbF SO8 Tube/Bulk 95 IRF9317TRPbF SO8 Tape and Reel 4000 Absolute Maximum Ratings Parameter Max. Units V -30 Drain-to-Source Voltage DS V Gate-to-Source Voltage 20 V GS I T = 25C Continuous Drain Current, V 10V -16 GS D A Continuous Drain Current, V 10V -13 A I T = 70C GS D A -130 I Pulsed Drain Current DM Power Dissipation 2.5 P T = 25C D A W P T = 70C Power Dissipation 1.6 D A 0.02 Linear Derating Factor W/C Operating Junction and -55 to + 150 T J C T Storage Temperature Range STG Notes through are on page 2 www.irf.com 1 3/5/10 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV V = 0V, I = -250A Drain-to-Source Breakdown Voltage -30 V GS D DSS V /T Reference to 25C, I = -1mA Breakdown Voltage Temp. Coefficient 0.022 V/C D DSS J R V = -10V, I = -16A 5.4 6.6 GS D DS(on) Static Drain-to-Source On-Resistance m V = -4.5V, I = -13A 8.3 10.2 GS D V Gate Threshold Voltage -1.3 -1.8 -2.4 V GS(th) V = V , I = -50A DS GS D V Gate Threshold Voltage Coefficient -5.7 mV/C GS(th) V = -24V, V = 0V I Drain-to-Source Leakage Current -1.0 DS GS DSS A V = -24V, V = 0V, T = 125C -150 DS GS J V = -20V I Gate-to-Source Forward Leakage -100 GS GSS nA V = 20V Gate-to-Source Reverse Leakage 100 GS V = -10V, I = -13A gfs Forward Transconductance 36 S DS D Q Total Gate Charge 31 nC V = -15V, V = -4.5V, I = - 13A g DS GS D V = -10V Q Total Gate Charge 61 92 GS g V = -15V Q Gate-to-Source Charge 9 nC DS gs I = -13A Q Gate-to-Drain Charge 14 D gd R Gate Resistance 14 G V = -15V, V = -4.5V t Turn-On Delay Time 19 DD GS d(on) I = -1.0A t Rise Time 64 D r ns R = 6.8 t Turn-Off Delay Time 160 G d(off) t Fall Time 120 See Figs. 20a &20b f V = 0V C Input Capacitance 2820 iss GS V = -15V C Output Capacitance 640 pF oss DS C Reverse Transfer Capacitance 370 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units E 330 Single Pulse Avalanche Energy mJ AS I -13 Avalanche Current A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol D S -2.5 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM -130 S (Body Diode) p-n junction diode. V T = 25C, I = -2.5A, V = 0V Diode Forward Voltage -1.2 V SD J S GS T = 25C, I = -2.5A, V = -24V t Reverse Recovery Time 33 50 ns rr J F DD Q Reverse Recovery Charge 30 45 nC di/dt = 100A/s rr Thermal Resistance Typ. Max. Parameter Units R 20 Junction-to-Drain Lead JL C/W R 50 Junction-to-Ambient JA Repetitive rating pulse width limited by max. junction temperature. Starting T = 25C, L = 4.3mH, R = 25, I = -13A. J G AS Pulse width 400s duty cycle 2%. When mounted on 1 inch square copper board. R is measured at T of approximately 90C. J For DESIGN AID ONLY, not subject to production testing. 2 www.irf.com