IRF9332PbF HEXFET Power MOSFET V -30 V DS R DS(on) max 17.5 m ( V = -10V) GS R DS(on) max 28.1 m ( V = -4.5V) GS Q 14 nC g (typical) SO-8 I D -9.8 A ( T = 25C) A Applications Features and Benefits Features Resulting Benefits results in Industry-Standard SO-8 Package Multi-Vendor Compatibility RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier Orderable part number Package Type Standard Pack Note Form Quantity IRF9332PbF SO8 Tube/Bulk 95 IRF9332TRPbF SO8 Tape and Reel 4000 Absolute Maximum Ratings Parameter Max. Units V -30 Drain-to-Source Voltage DS V V 20 Gate-to-Source Voltage GS I T = 25C Continuous Drain Current, V -10V -9.8 D A GS I T = 70C Continuous Drain Current, V -10V -7.8 A D A GS I Pulsed Drain Current -80 DM P T = 25C Power Dissipation 2.5 D A W P T = 70C Power Dissipation 1.6 D A Linear Derating Factor 0.02 W/C T -55 to + 150 J Operating Junction and C T Storage Temperature Range STG Notes through are on page 2 www.irf.com 1 09/01/2010 Static T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units BV V = 0V, I = -250A Drain-to-Source Breakdown Voltage -30 V GS D DSS Reference to 25C, I = -1mA V / T Breakdown Voltage Temp. Coefficient 0.021 V/C D DSS J V = -10V, I = -9.8A R 13.6 17.5 GS D DS(on) Static Drain-to-Source On-Resistance m V = -4.5V, I = -7.8A 22.5 28.1 GS D V Gate Threshold Voltage -1.3 -1.9 -2.4 V GS(th) V = V , I = -25A DS GS D V Gate Threshold Voltage Coefficient -5.7 mV/C GS(th) = -24V, V = 0V I Drain-to-Source Leakage Current -1.0 V DSS DS GS A V = -24V, V = 0V, T = 125C -150 DS GS J I V = -20V Gate-to-Source Forward Leakage -100 GS GSS nA V = 20V Gate-to-Source Reverse Leakage 100 GS V = -10V, I = -7.8A gfs Forward Transconductance 36 S DS D Q Total Gate Charge 14 nC V = -15V,V = -4.5V,I = -7.8A g DS GS D V = -10V Q Total Gate Charge 27 41 g GS V = -15V Q Gate-to-Source Charge 4.1 nC gs DS Q I = -7.8A gd Gate-to-Drain Charge 6.6 D R Gate Resistance 18 G t V = -15V, V = -4.5V Turn-On Delay Time 15 DD GS d(on) t I = -1.0A Rise Time 47 D r ns t Turn-Off Delay Time 73 R = 6.8 d(off) G t Fall Time 58 See Figs. 19a & 19b f V = 0V C Input Capacitance 1270 iss GS C pF V = -25V oss Output Capacitance 250 DS C = 1.0KHz Reverse Transfer Capacitance 180 rss Avalanche Characteristics Parameter Typ. Max. Units E 102 AS Single Pulse Avalanche Energy mJ I -7.8 Avalanche Current A AR Diode Characteristics Conditions Parameter Min. Typ. Max. Units I MOSFET symbol Continuous Source Current S D -2.5 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM -80 S (Body Diode) p-n junction diode. V Diode Forward Voltage -1.2 V T = 25C, I = -2.5A, V = 0V SD J S GS t Reverse Recovery Time 36 54 ns T = 25C, I = -2.5A, V = -24V rr J F DD Q Reverse Recovery Charge 20 30 nC di/dt = 100/s rr Thermal Resistance Typ. Max. Parameter Units R Junction-to-Drain Lead 20 JL C/W R Junction-to-Ambient 50 JA Repetitive rating pulse width limited by max. junction temperature. Starting T = 25C, L = 3.3mH, R = 25 , I = -7.8A. J G AS Pulse width 400s duty cycle 2%. When mounted on 1 inch square copper board. R is measured at T of approximately 90C. J For DESIGN AID ONLY, not subject to production testing. 2 www.irf.com