HEXFET Power MOSFET N-CH P-CH N-CHANNEL MOSFET 1 8 D1 S1 V 30 -30 V DS 2 7 G1 D1 R 27 64 m DS(on) max 3 6 S2 D2 Q 6.8 8.1 nC 4 5 g (typical) D2 G2 P-CHANNEL MOSFET I D Top View SO-8 6.8 -4.6 A ( T = 25C) A Applications Features Benefits High and low-side MOSFETs in a single package Increased power density High-side P-Channel MOSFET Easier drive circuitry Industry-standard pinout results in Multi-vendor compatibility Compatible with existing surface mount techniques Easier manufacturing RoHS compliant containing no Lead, no Bromide and no Halogen Environmentally friendlier MSL1, Consumer qualification Increased reliability Base Part Number Package Type Standard Pack Orderable part number Form Quantity Tube/Bulk 95 IRF9389PbF IRF9389PbF SO-8 Tape and Reel 4000 IRF9389TRPbF Absolute Maximum Ratings Max. Parameter Units N-Channel P-Channel V V Gate-to-Source Voltage 20 20 GS I T = 25C Continuous Drain Current, V 10V 6.8 -4.6 D A GS I T = 70C Continuous Drain Current, V 10V 5.4 -3.7 A D A GS Pulsed Drain Current 34 -23 I DM 2.0 P T = 25C Power Dissipation D A W P T = 70C Power Dissipation 1.3 D A 0.016 Linear Derating Factor W/C -55 to + 150 T Operating Junction and J C T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max Units R Junction-to-Drain Lead 20 JL C/W R Junction-to-Ambient 62.5 JA % & Static T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units BV Drain-to-Source Breakdown Voltage N-Ch 30 V V = 0V, I = 250 A DSS GS D P-Ch -30 V = 0V, I = -250A GS D V /T Breakdown Voltage Temp. Coefficient N-Ch 0.03 V/C Reference to 25C, I = 1mA DSS J D P-Ch 0.02 Reference to 25C, ID = -1mA N-Ch 22 27 m V = 10V, I = 6.8A GS D R Static Drain-to-Source On-Resistance 33 40 V = 4.5V, I = 5.4A DS(on) GS D P-Ch 51 64 m V = -10V, I = -4.6A GS D 82 103 V = -4.5V, I = -3.7A GS D V Gate Threshold Voltage N-Ch 1.3 1.8 2.3 V V = V , I = 10 A GS(th) DS GS D P-Ch -1.3 -1.8 -2.3 V = V , I = -10 A DS GS D N-Ch 1.0 A V = 24V, V = 0V DS GS I Drain-to-Source Leakage Current P-Ch -1.0 V = -24V, V = 0V DSS DS GS N-Ch 150 VDS = 24V, VGS = 0V, TJ = 125C P-Ch -150 V = -24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage N-Ch 100 nA V = 20V GSS GS P-Ch -100 VGS = -20V Gate-to-Source Reverse Leakage N-Ch -100 V = -20V GS P-Ch 100 V = 20V GS gfs Forward Transconductance N-Ch 8.2 S V = 15V, I = 5.4A DS D P-Ch 4.1 VDS = -15V, ID = -3.7A Q Total Gate Charge N-Ch 6.8 14 nC N-Channel g P-Ch 8.1 16 V = 10V, V = 15V, I = 6.8A GS DS D Q Gate-to-Source Charge N-Ch 1.4 gs P-Ch 1.3 P-Channel Q Gate-to-Drain Mille) Charge N-Ch 0.98 V = -10V, V = -15V, I = -4.6A gd GS DS D P-Ch 2.1 RG Gate Resistance N-Ch 2.2 4.4 P-Ch 9.4 19 N-Channel t Turn-On Delay Time N-Ch 5.1 ns d(on) P-Ch 8.0 VDD = 15V, VGS = 4.5V t Rise Time N-Ch 4.8 I = 1.0A, R = 6.2 r D G P-Ch 14 P-Channel t Turn-Off Delay Time N-Ch 4.9 d(off) P-Ch 17 V = -15V, V = -4.5V DD GS t Fall Time N-Ch 3.9 I = -1.0A, R = 6.8 f D G P-Ch 15 N-Channel Ciss Input Capacitance N-Ch 398 pF P-Ch 383 V = 0V, V = 15V, = 1.0MHz GS DS C Output Capacitance N-Ch 82 oss P-Channel P-Ch 104 C Reverse Transfer Capacitance N-Ch 36 V = 0V, V = -15V, = 1.0KHz rss GS DS P-Ch 64 Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current (Body DiodeN-Ch 2.0 A S P-Ch -2.0 I Pulsed Source Current (Body Diode) N-Ch 34 SM P-Ch -23 V Diode Forward Voltage N-Ch 1.2 V T = 25C, I = 2.0A, V = 0V SD J S GS P-Ch -1.2 T = 25C, I = -2.0A, V = 0V J S GS trr Reverse Recovery Time N-Ch 8.4 13 ns N-Channel: T = 25C, I = 2.0A, J F P-Ch 11 17 VDD = 15V, di/dt = 102/s Qrr Reverse Recovery Charge N-Ch 2.3 3.5 nC P-Channel: T = 25C, I = -2.0A, J F P-Ch 4.8 7.2 VDD = -15V, di/dt = 102/ s Notes: Repetitive rating pulse width limited by Surface mounted on 1 in square Cu board max. junction temperature. (See fig. 16) Pulse width 400 s duty cycle 2%. % &