IRF9530NSPbF IRF9530NLPbF Benefits HEXFET Power MOSFET Advanced Process Technology Surface Mount (IRF9530NS) V -100V DSS Low-profile through-hole(IRF9530NL) 175C Operating Temperature R 0.20 DS(on) Fast Switching I -14A D P-Channel Fully Avalanche Rated Lead-Free D D Description Fifth Generation HEXFET Power MOSFETs from International S S Rectifier utilize advanced processing techniques to achieve D G G extremely low on-resistance per silicon area. This benefit, TO-262 Pak combined with the fast switching speed and ruggedized device D2 Pak IRF9530NLPbF IRF9530NSPbF design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. G D S The D2Pak is a surface mount power package capable of Gate Drain Source accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9530NL) is available for low- profile applications. Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRF9530NLPbF TO-262 Tube 50 IRF9530NLPbF (Obsolete) IRF9530NSPbF D2-Pak Tape and Reel Left 800 IRF9530NSTRLPbF Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V -10V -14 D C GS I T = 100C Continuous Drain Current, V -10V -10 A D C GS I Pulsed Drain Current -56 DM P T = 25C Maximum Power Dissipation 3.8 W D A P T = 25C Maximum Power Dissipation 79 W D C Linear Derating Factor 0.53 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 250 mJ AS I Avalanche Current -8.4 A AR E Repetitive Avalanche Energy 7.9 mJ AR dv/dt Peak Diode Recovery dv/dt -5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 1.9 R JC C/W R Junction-to-Ambient ( PCB Mount, steady state) 40 JA 1 2016-5-27 IRF9530NS/LPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -100 V V = 0V, I = -250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient -0.11 V/C Reference to 25C, I = -1mA V / T (BR)DSS J D R Static Drain-to-Source On-Resistance 0.20 V = -10V, I = -8.4A DS(on) GS D V Gate Threshold Voltage -2.0 -4.0 V V = V , I = -250A GS(th) DS GS D gfs Forward Trans conductance 3.2 S V = -50V, I = -8.4A DS D -25 V = -100V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS -250 V = -80V,V = 0V,T =150C DS GS J Gate-to-Source Forward Leakage -100 V = -20V GS I nA GSS Gate-to-Source Reverse Leakage 100 V = 20V GS Q Total Gate Charge 58 I = -8.4A g D Q Gate-to-Source Charge 8.3 nC V = -80V gs DS Q Gate-to-Drain Charge 32 V = -10V See Fig.6 and 13 gd GS t Turn-On Delay Time 15 V = -50V d(on) DD t Rise Time 58 I = -8.4A r D ns t Turn-Off Delay Time 45 R = 9.1 d(off) G t Fall Time 46 R = 6.2See Fig.6 f D Between lead, L Internal Source Inductance 7.5 nH S and center of die contact C Input Capacitance 760 V = 0V iss GS C Output Capacitance 260 pF V = -25V oss DS C Reverse Transfer Capacitance 170 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I -14 S (Body Diode) showing the A Pulsed Source Current integral reverse I -56 SM (Body Diode) p-n junction diode. V Diode Forward Voltage -1.6 V T = 25C,I = -8.4A,V = 0V SD J S GS t Reverse Recovery Time 130 190 ns T = 25C ,I = -8.4A rr J F Q Reverse Recovery Charge 650 970 nC di/dt = -100A/s rr Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) t Forward Turn-On Time on S D Notes: Repetitive rating pulse width limited by max. junction temperature. (See fig. 11) starting T = 25C, L = 7.0mH, R = 25 , I = -8.4A. (See fig. 12) J G AS I -8.4A, di/dt -490A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 300s duty cycle 2%. Uses IRF9530N data and test conditions. When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 2 2016-5-27