IRFB3207ZGPbF Applications HEXFET Power MOSFET High Efficiency Synchronous Rectification in SMPS D V 75V DSS Uninterruptible Power Supply R typ. 3.3m DS(on) High Speed Power Switching max. 4.1m Hard Switched and High Frequency Circuits G I 170A D (Silicon Limited) I S 120A D (Package Limited) Benefits D Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA S D Enhanced body diode dV/dt and dI/dt G Capability TO-220AB Lead-Free IRFB3207ZGPbF Halogen-Free GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, VGS 10V (Silicon Limited) 170 D C I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 120 A D C GS I T = 25C Continuous Drain Current, V 10V (Wire Bond Limited) 120 D C GS I Pulsed Drain Current 670 DM P T = 25C 300 W Maximum Power Dissipation D C Linear Derating Factor 2.0 W/C V 20 V GS Gate-to-Source Voltage dv/dt Peak Diode Recovery 16 V/ns T -55 to + 175 J Operating Junction and T Storage Temperature Range STG C 300 Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw 10lbf in (1.1N m) Avalanche Characteristics Single Pulse Avalanche Energy E 170 mJ AS (Thermally limited) Avalanche Current I See Fig. 14, 15, 22a, 22b A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 0.50 R Case-to-Sink, Flat Greased Surface , TO-220 0.50 C/W CS R 62 JA Junction-to-Ambient, TO-220 www.irf.com 1 12/05/08 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 75 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.091 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 3.3 4.1 V = 10V, I = 75A DS(on) m GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 150A GS(th) DS GS D R Internal Gate Resistance 0.8 G(int) I Drain-to-Source Leakage Current 20 A V = 75V, V = 0V DSS DS GS 250 V = 75V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 280 S V = 50V, I = 75A DS D Q Total Gate Charge 120 170 I = 75A g D Q Gate-to-Source Charge 27 V = 38V gs DS nC Q Gate-to-Drain Mille) Charge 33 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 87 I = 75A, V =0V, V = 10V sync g gd D DS GS t Turn-On Delay Time 20 V = 49V d(on) DD t Rise Time 68 I = 75A r D ns t Turn-Off Delay Time 55 R = 2.7 d(off) G t Fall Time 68 V = 10V f GS C Input Capacitance 6920 V = 0V iss GS C Output Capacitance 600 V = 50V oss DS C Reverse Transfer Capacitance 270 = 1.0MHz rss pF C eff. (ER) 770 V = 0V, V = 0V to 60V oss Effective Output Capacitance (Energy Related) GS DS C eff. (TR) 960 V = 0V, V = 0V to 60V oss Effective Output Capacitance (Time Related) GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 170 (Body Diode) showing the A G I Pulsed Source Current 670 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 75A, V = 0V SD J S GS t T = 25C V = 64V, Reverse Recovery Time 36 54 ns rr J R 41 62 T = 125C I = 75A J F Q T = 25C di/dt = 100A/s Reverse Recovery Charge 50 75 nC rr J T = 125C 67 100 J I T = 25C Reverse Recovery Current 2.4 A RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Calculated continuous current based on maximum allowable junction I 75A, di/dt 1730A/s, V V , T 175C. SD DD (BR)DSS J temperature. Bond wire current limit is 120A. Note that current Pulse width 400s duty cycle 2%. limitations arising from heating of the device leads may occur with C eff. (TR) is a fixed capacitance that gives the same charging time oss some lead mounting arrangements. as C while V is rising from 0 to 80% V . oss DS DSS Repetitive rating pulse width limited by max. junction C eff. (ER) is a fixed capacitance that gives the same energy as oss temperature. C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.033mH Jmax J R is measured at T approximately 90C. J R = 25, I = 102A, V =10V. Part not recommended for use GS G AS above this value. 2 www.irf.com