IRFB3256PbF HEXFET Power MOSFET D V 60V DSS R typ. 2.7m DS(on) Applications max. 3.4m High Efficiency Synchronous Rectification in SMPS G I Uninterruptible Power Supply 206A D (Silicon Limited) High Speed Power Switching I 75A S D (Package Limited) Hard Switched and High Frequency Circuits Benefits Improved Gate, Avalanche and Dynamic dV/dt D Ruggedness Fully Characterized Capacitance and Avalanche SOA S D Enhanced body diode dV/dt and dI/dt Capability G Lead-Free TO-220AB GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 206 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 172 D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 75 D C GS I 820 Pulsed Drain Current DM P T = 25C Maximum Power Dissipation 300 W D C 2.0 Linear Derating Factor W/C V Gate-to-Source Voltage 20 V GS 3.3 dv/dt Peak Diode Recovery V/ns T Operating Junction and -55 to + 175 J T C STG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw 10lbf in (1.1N m) Avalanche Characteristics Single Pulse Avalanche Energy (Thermally Limited) E 340 mJ AS Avalanche Current I See Fig. 14, 15, 22a, 22b A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.50 C/W JC R 0.50 CS Case-to-Sink, Flat Greased Surface R Junction-to-Ambient 62 JA www.irf.com 1 09/22/11 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250 A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 29 mV/C Reference to 25C, I = 1.0mA (BR)DSS J D R Static Drain-to-Source On-Resistance 2.7 3.4 V = 10V, I = 75A DS(on) m GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 150 A GS(th) DS GS D gfs Forward Transconductance 88 S V = 25V, I = 75A DS D R Internal Gate Resistance 0.79 G I Drain-to-Source Leakage Current 20 A V = 60V, V = 0V DSS DS GS 250 V = 60V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA = 20V V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge 130 195 nC I = 75A g D Q Gate-to-Source Charge 31 V = 30V gs DS Q Gate-to-Drain Mille) Charge 42 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 88 I = 75A, V =0V, V = 10V sync g gd D DS GS t Turn-On Delay Time 22 ns V = 39V d(on) DD t Rise Time 77 I = 75A r D t Turn-Off Delay Time 55 R = 2.7 d(off) G t Fall Time 64 V = 10V f GS C Input Capacitance 6600 pF V = 0V iss GS C Output Capacitance 720 V = 48V oss DS C Reverse Transfer Capacitance 400 = 1.0 MHz, See Fig. 5 rss C eff. (ER) 1080 V = 0V, V = 0V to 48V , See Fig. 11 Effective Output Capacitance (Energy Related) oss GS DS C eff. (TR) 1400 V = 0V, V = 0V to 48V oss Effective Output Capacitance (Time Related) GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current A MOSFET symbol 206 S (Body Diode) showing the G I Pulsed Source Current 820 A integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 75A, V = 0V SD J S GS t T = 25C V = 51V, Reverse Recovery Time 43 ns rr J R T = 125C I = 75A 53 J F di/dt = 100A/s Q Reverse Recovery Charge 58 nC T = 25C rr J 65 T = 125C J I T = 25C Reverse Recovery Current 2.4 A RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Repetitive rating pulse width limited by max. junction C eff. (ER) is a fixed capacitance that gives the same energy as oss temperature. C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.12mH Jmax J R = 50, I = 75A, V =10V. Part not recommended for use G AS GS JC above this value. I 75A, di/dt 890A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging oss time as C while V is rising from 0 to 80% V . oss DS DSS 2 www.irf.com