PD - 96214 IRFB4110GPbF Applications HEXFET Power MOSFET High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply V 100V DSS High Speed Power Switching R typ. 3.7m DS(on) Hard Switched and High Frequency Circuits max. 4.5m I 180A D (Silicon Limited) I 120A D (Package Limited) Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D D Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability S Lead-Free G D G Halogen-Free TO-220AB IRFB4110GPbF S GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, VGS 10V (Silicon Limited) 180 D C I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 130 D C GS A I T = 25C Continuous Drain Current, V 10V (Wire Bond Limited) 120 D C GS I 670 DM Pulsed Drain Current P T = 25C W Maximum Power Dissipation 370 D C 2.5 Linear Derating Factor W/C V V Gate-to-Source Voltage 20 GS Peak Diode Recovery 5.3 dv/dt V/ns T -55 to + 175 Operating Junction and J T Storage Temperature Range STG C 300 Soldering Temperature, for 10 seconds (1.6mm from case) 10lbf in (1.1N m) Mounting torque, 6-32 or M3 screw Avalanche Characteristics Single Pulse Avalanche Energy E 190 mJ AS (Thermally limited) Avalanche Current I See Fig. 14, 15, 22a, 22b A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.402 JC R Case-to-Sink, Flat Greased Surface 0.50 C/W CS R 62 Junction-to-Ambient JA www.irf.com 1 01/06/09 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.108 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 3.7 4.5 V = 10V, I = 75A DS(on) m GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D I Drain-to-Source Leakage Current 20 V = 100V, V = 0V DSS DS GS A 250 V = 100V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 160 S V = 50V, I = 75A DS D Q Total Gate Charge 150 210 I = 75A g D Q Gate-to-Source Charge 35 nC V = 50V gs DS Q Gate-to-Drain Mille) Charge 43 V = 10V gd GS R Gate Resistance 1.3 G t Turn-On Delay Time 25 V = 65V d(on) DD t Rise Time 67 I = 75A r D ns t Turn-Off Delay Time 78 R = 2.6 d(off) G t Fall Time 88 V = 10V f GS C Input Capacitance 9620 V = 0V iss GS C Output Capacitance 670 V = 50V oss DS C Reverse Transfer Capacitance 250 = 1.0MHz pF rss C eff. (ER) 820 V = 0V, V = 0V to 80V oss Effective Output Capacitance (Energy Related) GS DS C eff. (TR) 950 V = 0V, V = 0V to 80V oss Effective Output Capacitance (Time Related) GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol S 170 D (Body Diode) showing the A I G Pulsed Source Current 670 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 75A, V = 0V SD J S GS t T = 25C V = 85V, Reverse Recovery Time 50 75 rr J R ns T = 125C I = 75A 60 90 J F di/dt = 100A/s Q Reverse Recovery Charge 94 140 T = 25C rr J nC T = 125C 140 210 J I T = 25C Reverse Recovery Current 3.5 A RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Calculated continuous current based on maximum allowable junction I 75A, di/dt 630A/s, V V , T 175C. SD DD (BR)DSS J temperature. Bond wire current limit is 120A. Note that current Pulse width 400s duty cycle 2%. limitations arising from heating of the device leads may occur with C eff. (TR) is a fixed capacitance that gives the same charging time oss some lead mounting arrangements. as C while V is rising from 0 to 80% V . oss DS DSS Repetitive rating pulse width limited by max. junction C eff. (ER) is a fixed capacitance that gives the same energy as oss temperature. C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.033mH R is measured at T approximately 90C. Jmax J J R = 25, I = 108A, V =10V. Part not recommended for use GS G AS above this value. 2 www.irf.com