X-On Electronics has gained recognition as a prominent supplier of IRFB59N10DPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFB59N10DPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFB59N10DPBF Infineon

IRFB59N10DPBF electronic component of Infineon
IRFB59N10DPBF Infineon
IRFB59N10DPBF MOSFETs
IRFB59N10DPBF  Semiconductors

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See Product Specifications
Part No. IRFB59N10DPBF
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 200W; TO220AB
Datasheet: IRFB59N10DPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Availability Price Quantity
0
MOQ : 3000
Multiples : 50
3000 : USD 1.128
5000 : USD 1.0612
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Obsolete
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MOQ : 15
Multiples : 15
15 : USD 1.1809
125 : USD 1.1018
500 : USD 1.0105
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MOQ : 15
Multiples : 15
15 : USD 1.0226
50 : USD 0.9168
200 : USD 0.8816
750 : USD 0.8463
2500 : USD 0.8463
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Obsolete
0

Multiples : 3000
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MOQ : 351
Multiples : 351
351 : USD 0.9015
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0
MOQ : 1
Multiples : 1
1 : USD 4.212
10 : USD 2.7809
30 : USD 2.7386
100 : USD 2.6948
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Obsolete
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MOQ : 1
Multiples : 1
1 : USD 5.2472
10 : USD 1.7806
100 : USD 1.3926
500 : USD 1.1738
1000 : USD 1.0146
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.7513
3 : USD 1.2186
23 : USD 1.1622
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Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Configuration
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
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We are delighted to provide the IRFB59N10DPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFB59N10DPBF and other electronic components in the MOSFETs category and beyond.

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The Infineon IRFB59N10DPBF is an N-MOSFET unipolar transistor with a 100V rating, a maximum current rating of 59A, a maximum power dissipation rating of 200W, and it is made in a TO220AB package. This makes it suitable for applications such as electronic motor drivers, converters, and other high power switching applications. The low on-resistance of the transistor contributes to high efficiency and fast switching. The ultra-low gate charge and charge output capacitance helps reduce EMI. Additionally, it features a high-breakdown voltage ratio, temperature stability, and dv/dt capabilities.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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