StrongIRFET IRFB7446GPbF HEXFET Power MOSFET Application Brushed Motor drive applications V 40V DSS D BLDC Motor drive applications R typ. 2.6m DS(on) Battery powered circuits max Half-bridge and full-bridge topologies 3.3m G Synchronous rectifier applications I 123A D (Silicon Limited) Resonant mode power supplies S OR-ing and redundant power switches I 120A D (Package Limited) DC/DC and AC/DC converters DC/AC Inverters Benefits S D Improved Gate, Avalanche and Dynamic dV/dt Ruggedness G Fully Characterized Capacitance and Avalanche SOA TO-220AB Enhanced body diode dV/dt and dI/dt Capability IRFB7446GPbF Lead-Free Halogen-Free G D S Gate Drain Source Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRFB7446GPbF TO-220 Tube 50 IRFB7446GPbF 8 125 I = 70A D 100 6 T = 125C J 75 4 50 2 T = 25C J 25 0 0 2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175 V Gate -to -Source Voltage (V) GS, T , Case Temperature (C) C Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On-Resistance vs. Gate Voltage 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback November 19, 2014 R , Drain-to -Source On Resistance (m ) DS(on) I , Drain Current (A) D IRFB7446GPbF Absolute Maximum Rating Symbol Parameter Max. Units I T = 25C Continuous Drain Current, VGS 10V (Silicon Limited) 123 D C T = 100C Continuous Drain Current, V 10V (Silicon Limited) 87 I D C GS A I T = 25C Continuous Drain Current, V 10V (Wire Bond Limited) 120 D C GS I Pulsed Drain Current 492 DM P T = 25C Maximum Power Dissipation 99 W D C Linear Derating Factor 0.66 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and J -55 to + 175 T Storage Temperature Range STG C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Avalanche Characteristics E 111 Single Pulse Avalanche Energy AS (Thermally limited) mJ E 236 AS (Thermally limited) Single Pulse Avalanche Energy I Avalanche Current A AR See Fig 15, 16, 23a, 23b E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 1.52 JC R Case-to-Sink, Flat Greased Surface C/W 0.50 CS R Junction-to-Ambient 62 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.033 V/C Reference to 25C, I = 5mA D (BR)DSS J 2.6 3.3 V = 10V, I = 70A GS D R Static Drain-to-Source On-Resistance m DS(on) 3.9 V = 6.0V, I = 35A GS D V Gate Threshold Voltage 2.2 3.0 3.9 V V = V , I = 100A GS(th) DS GS D 1.0 V =40 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V =40V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS R Gate Resistance 1.6 G Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating pulse width limited by max. junction temperature. Limited by T , starting T = 25C, L = 0.046mH,R = 50, I = 70A, V =10V. Jmax J G AS GS I 70A, di/dt 1174A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while VDS is rising from 0 to 80% V . oss oss DSS R is measured at T approximately 90C. J Limited by T , T = 25C, L= 1mH, R = 50, I = 22A, V =10V. Jmax J G AS GS 2 www.irf.com 2014 International Rectifier Submit Datasheet Feedback November 19, 2014