IRFBA1405PPbF Typical Applications Industrial Motor Drive HEXFET Power MOSFET D Benefits V = 55V DSS Advanced Process Technology Ultra Low On-Resistance R = 5.0m DS(on) Dynamic dv/dt Rating G 175C Operating Temperature Fast Switching I = 174A D S Repetitive Avalanche Allowed up to Tjmax Description Stripe Planar design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per o silicon area. Additional features of this MOSFET are a 175 C junction operating temperature, fast switching speed and improved ruggedness TM in single and repetitive avalanche. The Super-220 is a package that has been designed to have the same mechanical outline and pinout as the industry standard TO-220 but can house a considerably larger silicon die. The result is significantly increased current handling capability over both the TO-220 and the much larger TO-247 package. The combination of extremely low on-resistance silicon and the Super-220 TM package makes it ideal to reduce the component count in multiparalled TO-220 applications, reduce system power dissipation, upgrade existing designs or have TO-247 performance in a TO-220 outline. This package has been designed to meet automotive, Q101, qualification standard. These benefits make this design an extremely efficient and reliable device for use in a wide variety of applications. Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 174 D C GS I T = 100C Continuous Drain Current, V 10V 123 A D C GS I Pulsed Drain Current 680 DM P T = 25C Power Dissipation 330 W D C Linear Derating Factor 2.2 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 560 mJ AS I Avalanche Current See Fig.12a, 12b, 15, 16 A AR E Repetitive Avalanche Energy mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -40 to + 175 J T Storage Temperature Range -55 to + 175 STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Recommended clip force 20 N www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.057 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 4.3 5.0 m V = 10V, I = 101A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = 10V, I = 250 A GS(th) DS D g Forward Transconductance 69 S V = 25V, I = 110A fs DS D 20 V = 55V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 44V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 200 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -20V GS Q Total Gate Charge 170 260 I = 101A g D Q Gate-to-Source Charge 44 66 nC V = 44V gs DS Q Gate-to-Drain Mille) Charge 62 93 V = 10V gd GS t Turn-On Delay Time 13 V = 38V d(on) DD t Rise Time 190 I = 110A r D ns t Turn-Off Delay Time 130 R = 1.1 d(off) G t Fall Time 110 V = 10V f GS D Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH G from package L Internal Source Inductance 7.5 S and center of die contact S C Input Capacitance 5480 V = 0V iss GS C Output Capacitance 1210 pF V = 25V oss DS C Reverse Transfer Capacitance 280 = 1.0MHz, See Fig. 5 rss C Output Capacitance 5210 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 900 V = 0V, V = 44V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 1500 V = 0V, V = 0V to 44V oss GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 174 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 680 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 101A, V = 0V SD J S GS t Reverse Recovery Time 88 130 ns T = 25C, I = 101A rr J F Q Reverse RecoveryCharge 250 380 nC di/dt = 100A/ s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.45 C/W JC R Case-to-Sink, Flat, Greased Surface 0.50 CS R Junction-to-Ambient 58 JA 2 www.irf.com